Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT58M50JU2

APT58M50JU2

MOSFET N-CH 500V 58A SOT227

Microchip Technology
3,484 -

RFQ

APT58M50JU2

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 10800 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT58M50JU3

APT58M50JU3

MOSFET N-CH 500V 58A SOT227

Microchip Technology
2,285 -

RFQ

APT58M50JU3

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 10800 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT6010LLLG

APT6010LLLG

MOSFET N-CH 600V 54A TO264

Microchip Technology
2,974 -

RFQ

APT6010LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) - 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Through Hole
APT20M20JLL

APT20M20JLL

MOSFET N-CH 200V 104A ISOTOP

Microchip Technology
3,144 -

RFQ

APT20M20JLL

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 104A (Tc) - 20mOhm @ 52A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - Chassis Mount
APT21M100J

APT21M100J

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology
3,468 -

RFQ

APT21M100J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 380mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT19F100J

APT19F100J

MOSFET N-CH 1000V 20A ISOTOP

Microchip Technology
2,944 -

RFQ

APT19F100J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10M11JVRU2

APT10M11JVRU2

MOSFET N-CH 100V 142A SOT227

Microchip Technology
2,780 -

RFQ

APT10M11JVRU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M22JVRU2

APT20M22JVRU2

MOSFET N-CH 200V 97A SOT227

Microchip Technology
3,138 -

RFQ

APT20M22JVRU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M22JVRU3

APT20M22JVRU3

MOSFET N-CH 200V 97A SOT227

Microchip Technology
3,206 -

RFQ

APT20M22JVRU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT39F60J

APT39F60J

MOSFET N-CH 600V 42A ISOTOP

Microchip Technology
2,614 -

RFQ

APT39F60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M75JLLU3

APT50M75JLLU3

MOSFET N-CH 500V 51A SOT227

Microchip Technology
3,453 -

RFQ

APT50M75JLLU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M22JVR

APT20M22JVR

MOSFET N-CH 200V 97A ISOTOP

Microchip Technology
2,760 -

RFQ

APT20M22JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) - 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V - 10200 pF @ 25 V - - - Chassis Mount
APT6010B2FLLG

APT6010B2FLLG

MOSFET N-CH 600V 54A T-MAX

Microchip Technology
3,528 -

RFQ

APT6010B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) - 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Through Hole
APT8020LLLG

APT8020LLLG

MOSFET N-CH 800V 38A TO264

Microchip Technology
2,229 -

RFQ

APT8020LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) - 200mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - - Through Hole
APT32M80J

APT32M80J

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology
2,229 -

RFQ

APT32M80J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 190mOhm @ 24A, 10V 5V @ 2.5mA 303 nC @ 10 V ±30V 9326 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10045B2LLG

APT10045B2LLG

MOSFET N-CH 1000V 23A T-MAX

Microchip Technology
3,613 -

RFQ

APT10045B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V ±30V 4350 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10035LLLG

APT10035LLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology
2,685 -

RFQ

APT10035LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 350mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT58M50J

APT58M50J

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology
2,588 -

RFQ

APT58M50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT25M100J

APT25M100J

MOSFET N-CH 1000V 25A ISOTOP

Microchip Technology
2,883 -

RFQ

APT25M100J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 25A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10035LFLLG

APT10035LFLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology
2,650 -

RFQ

APT10035LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) - 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V - 5185 pF @ 25 V - - - Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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