Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT10045LLLG

APT10045LLLG

MOSFET N-CH 1000V 23A TO264

Microchip Technology
2,069 -

RFQ

APT10045LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
APT1201R2BFLLG

APT1201R2BFLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology
2,622 -

RFQ

APT1201R2BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) - 1.25Ohm @ 6A, 10V 5V @ 1mA 100 nC @ 10 V - 2540 pF @ 25 V - - - Through Hole
APT1001R6BFLLG

APT1001R6BFLLG

MOSFET N-CH 1000V 8A TO247

Microchip Technology
2,502 -

RFQ

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.6Ohm @ 4A, 10V 5V @ 1mA 55 nC @ 10 V ±30V 1320 pF @ 25 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10045B2FLLG

APT10045B2FLLG

MOSFET N-CH 1000V 23A T-MAX

Microchip Technology
3,948 -

RFQ

APT10045B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
APT10045LFLLG

APT10045LFLLG

MOSFET N-CH 1000V 23A TO264

Microchip Technology
2,065 -

RFQ

APT10045LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Through Hole
APT6010B2LLG

APT6010B2LLG

MOSFET N-CH 600V 54A T-MAX

Microchip Technology
2,484 -

RFQ

APT6010B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 10V 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V ±30V 6710 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT38F50J

APT38F50J

MOSFET N-CH 500V 38A ISOTOP

Microchip Technology
3,689 -

RFQ

APT38F50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8024LFLLG

APT8024LFLLG

MOSFET N-CH 800V 31A TO264

Microchip Technology
3,170 -

RFQ

APT8024LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 31A (Tc) 10V 260mOhm @ 15.5A, 10V 5V @ 2.5mA 160 nC @ 10 V ±30V 4670 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT38M50J

APT38M50J

MOSFET N-CH 500V 38A ISOTOP

Microchip Technology
3,768 -

RFQ

APT38M50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT26F120L

APT26F120L

MOSFET N-CH 1200V 27A TO264

Microchip Technology
3,353 -

RFQ

APT26F120L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 27A (Tc) 10V 650mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50M65LLLG

APT50M65LLLG

MOSFET N-CH 500V 67A TO264

Microchip Technology
2,769 -

RFQ

APT50M65LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT26F120B2

APT26F120B2

MOSFET N-CH 1200V 27A T-MAX

Microchip Technology
3,787 -

RFQ

APT26F120B2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 27A (Tc) 10V 650mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT51M50J

APT51M50J

MOSFET N-CH 500V 51A ISOTOP

Microchip Technology
3,770 -

RFQ

APT51M50J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M65B2FLLG

APT50M65B2FLLG

MOSFET N-CH 500V 67A T-MAX

Microchip Technology
2,972 -

RFQ

APT50M65B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50M65LFLLG

APT50M65LFLLG

MOSFET N-CH 500V 67A TO264

Microchip Technology
3,550 -

RFQ

APT50M65LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30F60J

APT30F60J

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology
3,517 -

RFQ

APT30F60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 8590 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT1201R5BVFRG

APT1201R5BVFRG

MOSFET N-CH 1200V 10A TO247

Microchip Technology
2,887 -

RFQ

APT1201R5BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V 4V @ 1mA 285 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
APT30M36LLLG

APT30M36LLLG

MOSFET N-CH 300V 84A TO264

Microchip Technology
3,137 -

RFQ

APT30M36LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 84A (Tc) - 36mOhm @ 42A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Through Hole
APT39M60J

APT39M60J

MOSFET N-CH 600V 42A ISOTOP

Microchip Technology
3,025 -

RFQ

APT39M60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5010JLLU3

APT5010JLLU3

MOSFET N-CH 500V 41A SOT227

Microchip Technology
3,712 -

RFQ

APT5010JLLU3

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 96 nC @ 10 V ±30V 4360 pF @ 25 V - 378W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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