Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT8030LVRG

APT8030LVRG

MOSFET N-CH 800V 27A TO264

Microchip Technology
2,242 -

RFQ

APT8030LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT34F100B2

APT34F100B2

MOSFET N-CH 1000V 35A T-MAX

Microchip Technology
3,403 -

RFQ

APT34F100B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 35A (Tc) 10V 380mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34F100L

APT34F100L

MOSFET N-CH 1000V 35A TO264

Microchip Technology
2,290 -

RFQ

APT34F100L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 35A (Tc) 10V 400mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50M75B2FLLG

APT50M75B2FLLG

MOSFET N-CH 500V 57A T-MAX

Microchip Technology
3,242 -

RFQ

APT50M75B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) - 75mOhm @ 28.5A, 10V 5V @ 2.5mA 125 nC @ 10 V - 5590 pF @ 25 V - - - Through Hole
APT84F50B2

APT84F50B2

MOSFET N-CH 500V 84A T-MAX

Microchip Technology
3,337 -

RFQ

APT84F50B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 84A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10M09LVFRG

APT10M09LVFRG

MOSFET N-CH 100V 100A TO264

Microchip Technology
2,962 -

RFQ

APT10M09LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) - 9mOhm @ 50A, 10V 4V @ 2.5mA 350 nC @ 10 V - 9875 pF @ 25 V - - - Through Hole
APT10078SLLG

APT10078SLLG

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology
3,113 -

RFQ

APT10078SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT8030LVFRG

APT8030LVFRG

MOSFET N-CH 800V 27A TO264

Microchip Technology
2,479 -

RFQ

APT8030LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT1201R4SFLLG

APT1201R4SFLLG

MOSFET N-CH 1200V 9A D3PAK

Microchip Technology
2,907 -

RFQ

APT1201R4SFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) - 1.4Ohm @ 4.5A, 10V 5V @ 1mA 120 nC @ 10 V - 2500 pF @ 25 V - - - Surface Mount
APT6013B2LLG

APT6013B2LLG

MOSFET N-CH 600V 43A T-MAX

Microchip Technology
3,095 -

RFQ

APT6013B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) - 130mOhm @ 21.5A, 10V 5V @ 2.5mA 130 nC @ 10 V - 5630 pF @ 25 V - - - Through Hole
APT6013LLLG

APT6013LLLG

MOSFET N-CH 600V 43A TO264

Microchip Technology
2,754 -

RFQ

APT6013LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 130mOhm @ 21.5A, 10V 5V @ 2.5mA 130 nC @ 10 V ±30V 5630 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12080LVRG

APT12080LVRG

MOSFET N-CH 1200V 16A TO264

Microchip Technology
2,674 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 800mOhm @ 8A, 10V 4V @ 2.5mA 485 nC @ 10 V ±30V 7800 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT56F60B2

APT56F60B2

MOSFET N-CH 600V 60A T-MAX

Microchip Technology
2,438 -

RFQ

APT56F60B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10050LVFRG

APT10050LVFRG

MOSFET N-CH 1000V 21A TO264

Microchip Technology
2,794 -

RFQ

APT10050LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT10050B2VFRG

APT10050B2VFRG

MOSFET N-CH 1000V 21A T-MAX

Microchip Technology
3,907 -

RFQ

APT10050B2VFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT40N60JCU3

APT40N60JCU3

MOSFET N-CH 600V 40A SOT227

Microchip Technology
3,151 -

RFQ

APT40N60JCU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 1mA 259 nC @ 10 V ±20V 7015 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT6011B2VRG

APT6011B2VRG

MOSFET N-CH 600V 49A T-MAX

Microchip Technology
2,034 -

RFQ

APT6011B2VRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) - 110mOhm @ 24.5A, 10V 4V @ 2.5mA 450 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
APT30M60J

APT30M60J

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology
2,717 -

RFQ

APT30M60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 5890 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M16LFLLG

APT20M16LFLLG

MOSFET N-CH 200V 100A TO264

Microchip Technology
3,257 -

RFQ

APT20M16LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 16mOhm @ 50A, 10V 5V @ 2.5mA 140 nC @ 10 V - 7220 pF @ 25 V - - - Through Hole
APT20M18B2VFRG

APT20M18B2VFRG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology
3,781 -

RFQ

APT20M18B2VFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
Total 697 Record«Prev1... 2021222324252627...35Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario