+86 075582561136
Subir BOM
Transistores - FET, MOSFET - RF
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Frequency | Gain | Voltage-Test | CurrentRating(Amps) | NoiseFigure | Current-Test | Power-Output | Voltage-Rated |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FSS234-TL-ENCH 4V DRIVE SERIES onsemi |
2,748 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SJ499-TL-EPCH 4V DRIVE SERIES onsemi |
3,762 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SJ659-EPCH 4V DRIVE SERIES onsemi |
2,566 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
BXL4004-1EXNCH 4.5V DRIVE SERIES onsemi |
3,542 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SK1740-5-TB-EN-CHANNEL JUNCTION SILICON FET Sanyo |
2,012 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SK3113-Z-E1-AZSMALL SIGNAL FET Renesas Electronics America Inc |
3,435 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - |
|
2SK4101FS-V-HNCH 10V DRIVE SERIES onsemi |
3,139 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - |
|
|
2SJ660-DL-EPCH 4V DRIVE SERIES onsemi |
737 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
2SJ277-DL-EPCH 4V DRIVE SERIES onsemi |
3,388 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SK1909-DL-ENCH 4V DRIVE SERIES onsemi |
3,523 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SK1691-ENCH 10V DRIVE SERIES onsemi |
3,451 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
JDX5004NFET T0220FP JPN onsemi |
2,688 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
IRF225N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
288 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - |
|
94-2402IRF530 - 400V HEXFET, N-CHANNEL International Rectifier |
150 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SJ348-AEC-UA10PCH 4V DRIVE SERIES onsemi |
710 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|
|
2SK4087LS-MG5NCH 10V DRIVE SERIES onsemi |
200 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - |
|
|
IRFAF20N-CHANNEL HERMETIC MOS HEXFET International Rectifier |
620 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - |
|
|
MWT-PH33FTRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc. |
2,578 | - |
RFQ |
Ficha técnica |
Case | - | Active | pHEMT FET | 26GHz | 14dB | 3 V | 90mA | - | 1 mA | 24dBm | - |
|
NTE221MOSFET N-CH VHF AMP/MIX NTE Electronics, Inc |
3,226 | - |
RFQ |
Ficha técnica |
Bag | - | Active | N-Channel | - | 20dB | 13 V | 18mA | 5dB | 10 mA | - | 20 V |
|
|
MWT-PH27FTRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc. |
100 | - |
RFQ |
Ficha técnica |
Case | - | Active | pHEMT FET | 26GHz | 14dB | 3 V | 120mA | - | 1 mA | 25dBm | - |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
