Más categorías de productos

Transistores - FET, MOSFET - RF

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MRF6S9130HSR5 FET RF 68V 880MHZ NI-780S Freescale Semiconductor	3,059	-	RFQ		Bulk	-	Active	LDMOS	880MHz	19.2dB	28 V	-	-	950 mA	27W	68 V
MRF6S23100HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor	2,248	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	2.3GHz ~ 2.4GHz	15.4dB	28 V	10µA	-	1 A	20W	68 V
BLF7G20L-90P112 LDMOS RF POWER TRANSISTOR Ampleon USA Inc.	3,517	-	RFQ	Ficha técnica	Bulk	BLF	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	19.5dB	28 V	2µA	-	550 mA	90W	65 V
BLF8G22LS-270112 LDMOS RF POWER TRANSISTOR Ampleon USA Inc.	2,565	-	RFQ	Ficha técnica	Bulk	BLF	Active	LDMOS	2.11GHz ~ 2.17GHz	17.7dB	28 V	4.2µA	-	2.4 A	270W	65 V
MRF8HP21130HR5 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor	2,933	-	RFQ	Ficha técnica	Bulk	-	Obsolete	LDMOS (Dual)	2.17GHz	14dB	28 V	-	-	360 mA	28W	65 V
MRF7S38040HSR5 FET RF 65V 3.6GHZ NI-400S Freescale Semiconductor	2,994	-	RFQ		Bulk	-	Active	LDMOS	3.4GHz ~ 3.6GHz	14dB	30 V	-	-	450 mA	8W	65 V
BLF8G10LS-270,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	3,734	-	RFQ	Ficha técnica	Tube	-	Active	LDMOS	820MHz ~ 960MHz	18.5dB	28 V	4.2µA	-	2 A	270W	65 V
MRF5S9150HR5 FET RF 68V 880MHZ NI-780S Freescale Semiconductor	100	-	RFQ		Bulk	-	Active	LDMOS	880MHz	19.7dB	28 V	-	-	1.5 A	33W	68 V
BLF6G20-110,112 RF TRANSISTOR NXP USA Inc.	2,711	-	RFQ	Ficha técnica	Tray	-	Obsolete	LDMOS	1.93GHz ~ 1.99GHz	19dB	28 V	29A	-	900 mA	25W	65 V
BLF7G27L-100,112 RF TRANSISTOR NXP USA Inc.	3,653	-	RFQ	Ficha técnica	Tube	-	Obsolete	LDMOS	2.5GHz ~ 2.7GHz	18dB	28 V	28A	-	900 mA	20W	65 V
MRF5S21130HSR5 FET RF 65V 2.17GHZ NI-880S Freescale Semiconductor	2,490	-	RFQ		Bulk	-	Active	LDMOS	2.11GHz ~ 2.17GHz	13.5dB	28 V	-	-	1.2 A	28W	65 V
BLF6G27LS-75,112 RF TRANSISTOR NXP USA Inc.	2,643	-	RFQ	Ficha técnica	Tray	-	Obsolete	LDMOS	-	-	28 V	18A	-	600 mA	9W	65 V
BLF8G10LS-270V,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	2,769	-	RFQ	Ficha técnica	Tube	-	Active	LDMOS	871.5MHz ~ 891.5MHz	19.5dB	28 V	-	-	2 A	67W	65 V
MRF6S19120HR5 FET RF 68V 1.99GHZ NI-780 Freescale Semiconductor	3,271	-	RFQ		Bulk	-	Active	LDMOS	1.99GHz	15dB	28 V	-	-	1 A	19W	68 V
BLD6G22L-50,112 RF TRANSISTOR NXP USA Inc.	2,624	-	RFQ	Ficha técnica	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.14GHz	14dB	28 V	10.2A	-	170 mA	8W	65 V
BLD6G21L-50,112 RF TRANSISTOR NXP USA Inc.	3,624	-	RFQ	Ficha técnica	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.02GHz	14.5dB	28 V	10.2A	-	170 mA	8W	65 V
MRF8P20100HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor	3,731	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS (Dual)	2.03GHz	16dB	28 V	-	-	400 mA	20W	65 V
MRFE6S9135HSR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	3,129	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	1GHz	21dB	28 V	10µA	-	1 A	39W	66 V
MRF9135LR5 FET RF 65V 880MHZ NI-780 Freescale Semiconductor	2,463	-	RFQ		Bulk	-	Active	LDMOS	880MHz	17.8dB	26 V	-	-	1.1 A	25W	65 V
CLF1G0060S-10U RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	2,677	-	RFQ	Ficha técnica	Bulk	-	Active	GaN HEMT	3GHz ~ 3.5GHz	14.5dB	50 V	-	-	50 mA	10W	150 V