Transistores - FET, MOSFET - RF

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
BLS6G2735L-30,112

BLS6G2735L-30,112

RF FET LDMOS 60V 13DB SOT1135A

Ampleon USA Inc.
3,088 -

RFQ

BLS6G2735L-30,112

Ficha técnica

Tray - Not For New Designs LDMOS 3.1GHz ~ 3.5GHz 13dB 32 V - - 50 mA 30W 60 V
VRF152G

VRF152G

RF MOSFET (VDMOS) 140V 150W 175M

Microchip Technology
2,327 -

RFQ

VRF152G

Ficha técnica

Bulk - Active 2 N-Channel (Dual) 175MHz 16dB 50 V - - 500 mA 300W 130 V
MRF141G

MRF141G

FET RF 2CH 65V 175MHZ 375-04

MACOM Technology Solutions
3,041 -

RFQ

MRF141G

Ficha técnica

Tray - Active 2 N-Channel (Dual) Common Source 175MHz 14dB 28 V 32A - 500 mA 300W 65 V
BLL8H1214L-500U

BLL8H1214L-500U

RF FET LDMOS 100V 17DB SOT539A

Ampleon USA Inc.
3,477 -

RFQ

BLL8H1214L-500U

Ficha técnica

Tray - Active LDMOS (Dual), Common Source 1.2GHz ~ 1.4GHz 17dB 50 V - - 150 mA 500W 100 V
CGH21240F

CGH21240F

GAN HEMT 28V 1.8-2.1GHZ

Wolfspeed, Inc.
3,532 -

RFQ

CGH21240F

Ficha técnica

Tray GaN Active HEMT 1.8GHz ~ 2.3GHz 15dB 28 V - - 1 A 240W 84 V
IGN1011L1200

IGN1011L1200

GAN, RF POWER TRANSISTOR, L-BAND

Integra Technologies Inc.
3,431 -

RFQ

IGN1011L1200

Ficha técnica

Tray - Active HEMT 1.03GHz ~ 1.09GHz 16.8dB 50 V - - 160 mA 1250W 180 V
MRF154

MRF154

FET RF 125V 100MHZ 368-03

MACOM Technology Solutions
2,387 -

RFQ

MRF154

Ficha técnica

Tray - Active N-Channel 2MHz ~ 100MHz 17dB 50 V 60A - 800 mA 600W 125 V
NPT25015D

NPT25015D

HEMT N-CH 28V 23W DC-3GHZ 8SOIC

MACOM Technology Solutions
2,404 -

RFQ

NPT25015D

Ficha técnica

Tube - Active HEMT 0Hz ~ 3GHz 14dB 28 V 5A - 200 mA 1.5W 100 V
NPT1004D

NPT1004D

HEMT N-CH 28V 45W DC-4GHZ 8SOIC

MACOM Technology Solutions
2,602 -

RFQ

NPT1004D

Ficha técnica

Tube - Active HEMT 0Hz ~ 4GHz 13dB 28 V 9.5A - 350 mA 37dBm 100 V
BLC9H10XS-350AZ

BLC9H10XS-350AZ

BLC9H10XS-350A/SOT1273/TRAYDP

Ampleon USA Inc.
3,091 -

RFQ

BLC9H10XS-350AZ

Ficha técnica

Tray - Active LDMOS 617MHz ~ 960MHz 19.5dB 50 V 1.4µA - 400 mA 350W 105 V
MCH5835-TL-E

MCH5835-TL-E

NCH+SBD 2.5V DRIVE SERIES

onsemi
2,354 -

RFQ

Bulk * Active - - - - - - - - -
CPH3338-T-TL-H

CPH3338-T-TL-H

PCH 4V DRIVE SERIES

onsemi
3,139 -

RFQ

Bulk * Active - - - - - - - - -
MCH6634-TL-E

MCH6634-TL-E

PCH+NCH 2.5V DRIVE SERIES

onsemi
2,629 -

RFQ

Bulk * Active - - - - - - - - -
BF 2040 E6814

BF 2040 E6814

RF N-CHANNEL MOSFET

Infineon Technologies
3,731 -

RFQ

BF 2040 E6814

Ficha técnica

Bulk * Active - - - - - - - - -
CPH5819-TL-E

CPH5819-TL-E

NCH+SBD 4V DRIVE SERIES

onsemi
2,767 -

RFQ

Bulk * Active - - - - - - - - -
BF 1009SR E6327

BF 1009SR E6327

RF N-CHANNEL MOSFET

Infineon Technologies
2,644 -

RFQ

BF 1009SR E6327

Ficha técnica

Bulk - Active N-Channel 800MHz 22dB 9 V 25mA 1.4dB - - 12 V
2SK937Y4-AA

2SK937Y4-AA

NCH J-FET

onsemi
2,916 -

RFQ

2SK937Y4-AA

Ficha técnica

Bulk * Obsolete - - - - - - - - -
CPH3445-TL-E

CPH3445-TL-E

NCH 4V DRIVE SERIES

onsemi
2,649 -

RFQ

Bulk * Active - - - - - - - - -
CPH5820-TL-E

CPH5820-TL-E

PCH+SBD 4V DRIVE SERIES

onsemi
2,497 -

RFQ

Bulk * Active - - - - - - - - -
FC18G-TL

FC18G-TL

NCH J-FET+BIP NPN

onsemi
2,539 -

RFQ

Bulk * Active - - - - - - - - -
Total 2777 Record«Prev1... 4041424344454647...139Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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