Más categorías de productos

Transistores - FET, MOSFET - RF

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
TM-30 TM-30 - 30W BROADBAND RF POWER G Ampleon USA Inc.	244	-	RFQ	Ficha técnica	Tray	-	Obsolete	GaN HEMT	-	-	-	-	-	-	30W	-
CLF1G0035S-50 CLF1G0035S-50 - 50W BROADBAND RF Ampleon USA Inc.	260	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
AFT26H250-24SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	438	-	RFQ		Bulk	*	Active	-	-	-	-	-	-	-	-	-
MRF7S24250NR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	250	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	2.45GHz	14.7dB	30 V	-	-	100 mA	256W	65 V
MRF8S9170NR3 RF ULTRA HIGH FREQUENCY BAND, N- NXP USA Inc.	750	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
CLF1G0035-50 CLF1G0035-50 - 50W BROADBAND RF Ampleon USA Inc.	318	-	RFQ	Ficha técnica	Tray	-	Active	GaN HEMT	3GHz	11.5dB	50 V	-	-	150 mA	50W	150 V
A2T26H160-24SR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	191	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS (Dual)	2.58GHz	15.5dB	28 V	-	-	350 mA	28W	65 V
MRFX1K80NR5 RF MOSFET LDMOS 65V OM1230-4L NXP USA Inc.	3,029	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.8MHz ~ 470MHz	24dB	65 V	-	-	-	1800W	-
MRFE6VP61K25NR6 WIDEBAND RF POWER LDMOS TRANSIST Freescale Semiconductor	3,185	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
MRF6VP3450HR5 LATERAL N-CHANNEL BROADBAND RF P NXP Semiconductors	595	-	RFQ		Bulk	-	Obsolete	LDMOS (Dual), Common Source	470MHz ~ 860MHz	22.5dB	50 V	10µA	-	1.4 A	450W	110 V
MMRF1306HR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	2,265	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS (Dual)	230MHz	24dB	50 V	-	-	100 mA	1250W	133 V
A2T21H360-24SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	2,234	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
SA2T18H450W19SR6 A2T18H450 - AIRFAST RF POWER LDM NXP Semiconductors	2,211	-	RFQ		Bulk	-	Obsolete	LDMOS (Dual)	1.805GHz ~ 1.88GHz	16.6dB	30 V	10µA	-	800 mA	89W	65 V
MMRF5017HSR5 RF MOSFET HEMT 50V NI400S-2S NXP USA Inc.	3,637	-	RFQ	Ficha técnica	Tray	-	Active	HEMT	30MHz ~ 2.2GHz	18.4dB	50 V	-	-	200 mA	125W	150 V
CLF1G0035S-100 CLF1G0035S-100 - 100W BROADBAND NXP Semiconductors	3,020	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
A2T21H450W19SR6 A2T21H450W19 - AIRFAST RF POWER NXP Semiconductors	277	-	RFQ		Bulk	-	Obsolete	LDMOS	2.11GHz ~ 2.2GHz	15.7dB	30 V	10µA	-	800 mA	89W	65 V
TM-100 TM-100 - 100W BROADBAND RF POWER Ampleon USA Inc.	108	-	RFQ	Ficha técnica	Tray	-	Obsolete	GaN HEMT	-	-	-	-	-	-	100W	-
AFV09P350-04GNR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	253	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS (Dual)	920MHz	19.5dB	48 V	-	-	860 mA	100W	105 V
CLF1G0035-100 CLF1G0035-100 - 100W BROADBAND R Rochester Electronics, LLC	146	-	RFQ		Bulk	-	Obsolete	HEMT	3.5GHz	12dB	50 V	-	-	330 mA	100W	150 V
MRF6VP11KHR5 RF POWER FIELD-EFFECT TRANSISTOR NXP USA Inc.	971	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-