Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
TSM110NB04DCR RLG

TSM110NB04DCR RLG

DUAL N-CHANNEL POWER MOSFET 40V

Taiwan Semiconductor Corporation
2,113 -

RFQ

TSM110NB04DCR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 40V 10A (Ta), 48A (Tc) 11mOhm @ 10A, 10V 4V @ 250µA 25nC @ 10V 1506pF @ 20V 2W (Ta), 48W (Tc) -55°C ~ 155°C (TJ) Surface Mount
SMA5131

SMA5131

MOSFET 6N CH 250V 2A 12-SIP

Sanken
3,665 -

RFQ

SMA5131

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Standard 250V 2A - - - - - - Through Hole
SMA5132

SMA5132

MOSFET 3N/3P-CH 500V 1.5A 12-SIP

Sanken
100 -

RFQ

SMA5132

Ficha técnica

Tube - Active 3 N and 3 P-Channel (3-Phase Bridge) Standard 500V 1.5A - - - - - - Through Hole
SMA5133

SMA5133

MOSFET 3N/3P-CH 500V 2.5A 12-SIP

Sanken
3,219 -

RFQ

SMA5133

Ficha técnica

Tube - Active 3 N and 3 P-Channel (3-Phase Bridge) Standard 500V 2.5A - - - - - - Through Hole
NTTFD4D0N04HLTWG

NTTFD4D0N04HLTWG

MOSFET, POWER, 40V POWERTRENCH P

onsemi
337 -

RFQ

NTTFD4D0N04HLTWG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 40V 15A (Ta), 60A (Tc) 4.5mOhm @ 10A, 10V 2V @ 50µA 18nC @ 10V 1100pF @ 20V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SMA5117

SMA5117

MOSFET 6N-CH 250V 7A 12-SIP

Sanken
2,395 -

RFQ

SMA5117

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Standard 250V 7A 250mOhm @ 3.5A, 10V 4V @ 1mA - 850pF @ 10V 4W 150°C (TJ) Through Hole
SMA5118

SMA5118

MOSFET 6N-CH 500V 5A 12-SIP

Sanken
3,969 -

RFQ

SMA5118

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Standard 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 4W 150°C (TJ) Through Hole
SLA5201

SLA5201

MOSFET 3N/3P-CH 600V 7A 15-SIP

Sanken
3,448 -

RFQ

SLA5201

Ficha técnica

Tube - Active 3 N and 3 P-Channel (3-Phase Bridge) Standard 600V 7A - - - - - - Through Hole
FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1

MOSFET MODULE 1200V 50A

Infineon Technologies
2,176 -

RFQ

FF45MR12W1M1B11BOMA1

Ficha técnica

Tray CoolSiC™+ Last Time Buy 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V 20mW (Tc) -40°C ~ 150°C (TJ) Chassis Mount
MSCSM70AM19CT1AG

MSCSM70AM19CT1AG

PM-MOSFET-SIC-SBD~-SP1F

Microchip Technology
3,982 -

RFQ

MSCSM70AM19CT1AG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
DF11MR12W1M1B11BPSA1

DF11MR12W1M1B11BPSA1

MOSFET MOD 1200V 50A

Infineon Technologies
3,065 -

RFQ

DF11MR12W1M1B11BPSA1

Ficha técnica

Tray CoolSiC™+ Last Time Buy 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 22.5mOhm @ 50A, 15V 5.55V @ 20mA 124nC @ 15V 3680pF @ 800V 20mW -40°C ~ 150°C (TJ) Chassis Mount
TPD3215M

TPD3215M

GANFET 2N-CH 600V 70A MODULE

Transphorm
3,985 -

RFQ

TPD3215M

Ficha técnica

Bulk - Obsolete 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 600V 70A (Tc) 34mOhm @ 30A, 8V - 28nC @ 8V 2260pF @ 100V 470W -40°C ~ 150°C (TJ) Through Hole
MSCSM120AM16CT1AG

MSCSM120AM16CT1AG

PM-MOSFET-SIC-SBD~-SP1F

Microchip Technology
2,890 -

RFQ

MSCSM120AM16CT1AG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCM20XM16F4G

MSCM20XM16F4G

PM-MOSFET-FREDFET-7-SP4

Microchip Technology
2,988 -

RFQ

MSCM20XM16F4G

Ficha técnica

Tube - Active - - 200V 77A (Tc) - - - - - - Chassis Mount
MSCC60AM23C4AG

MSCC60AM23C4AG

PM-MOSFET-COOLMOS-SBD-SP4

Microchip Technology
2,315 -

RFQ

MSCC60AM23C4AG

Ficha técnica

Tube - Active 2 N-Channel Standard 600V 81A (Tc) - - - - - - Chassis Mount
F415MR12W2M1B76BOMA1

F415MR12W2M1B76BOMA1

LOW POWER EASY AG-EASY2B-2

Infineon Technologies
2,357 -

RFQ

Tray EasyPACK™ CoolSiC™ Last Time Buy 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 75A (Tj) 15mOhm @ 75A, 15V 5.55V @ 30mA 186nC @ 15V 5520pF @ 800V - -40°C ~ 150°C (TJ) Chassis Mount
F411MR12W2M1B76BOMA1

F411MR12W2M1B76BOMA1

LOW POWER EASY AG-EASY2B-2

Infineon Technologies
3,554 -

RFQ

Tray EasyPACK™ CoolSiC™ Last Time Buy 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) Chassis Mount
APTMC120AM25CT3AG

APTMC120AM25CT3AG

MOSFET 2N-CH 1200V 105A SP3F

Microchip Technology
2,609 -

RFQ

APTMC120AM25CT3AG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 113A (Tc) 25mOhm @ 80A, 20V 2.2V @ 4mA (Typ) 197nC @ 20V 3800pF @ 1000V 500W -40°C ~ 150°C (TJ) Chassis Mount
MSCSM120AM042CT6AG

MSCSM120AM042CT6AG

PM-MOSFET-SIC-SBD~-SP6C

Microchip Technology
2,413 -

RFQ

MSCSM120AM042CT6AG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70AM025CD3AG

MSCSM70AM025CD3AG

PM-MOSFET-SIC-SBD~-D3

Microchip Technology
3,485 -

RFQ

MSCSM70AM025CD3AG

Ficha técnica

Box - Active - - 700V 538A (Tc) - - - - - - Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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