Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
MHT1000HR5178

MHT1000HR5178

N CHANNEL ENHANCEMENT-MODE RF PO

NXP USA Inc.
2,765 -

RFQ

MHT1000HR5178

Ficha técnica

Bulk * Active - - - - - - - - - - -
MSCSM70DUM025AG

MSCSM70DUM025AG

PM-MOSFET-SIC-SP6C

Microchip Technology
2,002 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1882W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM042AG

MSCSM120DUM042AG

PM-MOSFET-SIC-SP6C

Microchip Technology
2,846 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1000V 2031W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TLM15CAG

MSCSM170TLM15CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,608 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70TLM07CAG

MSCSM70TLM07CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,614 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170DUM039AG

MSCSM170DUM039AG

PM-MOSFET-SIC-SP6C

Microchip Technology
3,059 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2400W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TLM11CAG

MSCSM120TLM11CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,499 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9000pF @ 1000V 1042W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70DUM017AG

MSCSM70DUM017AG

PM-MOSFET-SIC-SP6C

Microchip Technology
3,033 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TLM11CAG

MSCSM170TLM11CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,673 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1114W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM027AG

MSCSM120DUM027AG

PM-MOSFET-SIC-SP6C

Microchip Technology
3,866 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @ 1000V 2968W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70TLM05CAG

MSCSM70TLM05CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
3,313 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1277W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TLM08CAG

MSCSM120TLM08CAG

PM-MOSFET-SIC-SBD-SP6C

Microchip Technology
2,966 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12000pF @ 1000V 1378W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TAM15CTPAG

MSCSM170TAM15CTPAG

PM-MOSFET-SIC-SBD-SP6P

Microchip Technology
3,310 -

RFQ

MSCSM170TAM15CTPAG

Ficha técnica

Bulk - Active 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
2,312 -

RFQ

MSCSM170AM039CT6AG

Ficha técnica

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2.4kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
NX138BKSX

NX138BKSX

MOSFET 2 N-CH 60V 210MA 6TSSOP

Nexperia USA Inc.
3,761 -

RFQ

NX138BKSX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 60V 210mA (Ta) 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.7nC @ 10V 20pF @ 30V 320mW -55°C ~ 150°C (TJ) Surface Mount
SSM6N36TU,LF

SSM6N36TU,LF

SMALL SIGNAL MOSFET N-CH X 2 VDS

Toshiba Semiconductor and Storage
429 -

RFQ

SSM6N36TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 500mA (Ta) 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 500mW (Ta) 150°C Surface Mount
EM6K7T2CR

EM6K7T2CR

1.2V DRIVE NCH+NCH MOSFET. COMPL

Rohm Semiconductor
2,908 -

RFQ

EM6K7T2CR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 20V 200mA (Ta) 1.2Ohm @ 200mA, 2.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) Surface Mount
CMLDM7003T TR

CMLDM7003T TR

MOSFET 2N-CH 50V 0.28A SOT563

Central Semiconductor Corp
847 -

RFQ

CMLDM7003T TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete 2 N-Channel (Dual) Standard 50V 280mA 1.5Ohm @ 50mA, 5V 1.2V @ 250µA 0.76nC @ 4.5V 50pF @ 25V 350mW -65°C ~ 150°C (TJ) Surface Mount
NTJD1155LT1G

NTJD1155LT1G

MOSFET N/P-CH 8V 1.3A SOT363

onsemi
3,257 -

RFQ

NTJD1155LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N and P-Channel Standard 8V 1.3A 175mOhm @ 1.2A, 4.5V 1V @ 250µA - - 400mW -55°C ~ 150°C (TJ) Surface Mount
DMG1029SV-7

DMG1029SV-7

MOSFET N/P-CH 60V SOT563

Diodes Incorporated
3,561 -

RFQ

DMG1029SV-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Logic Level Gate 60V 500mA, 360mA 1.7Ohm @ 500mA, 10V 2.5V @ 250µA 0.3nC @ 4.5V 30pF @ 25V 450mW -55°C ~ 150°C (TJ) Surface Mount
Total 5629 Record«Prev1... 4950515253545556...282Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario