Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
HAT1126RWS-E

HAT1126RWS-E

POWER TRS1

Renesas Electronics America Inc
2,026 -

RFQ

HAT1126RWS-E

Ficha técnica

Bulk * Active - - - - - - - - - - -
CSD86356Q5DT

CSD86356Q5DT

CSD86356Q5D 25V, NCH SYNCHRONOUS

Texas Instruments
2,025 -

RFQ

CSD86356Q5DT

Ficha técnica

Bulk * Active - - - - - - - - - - -
UPA1770G-E1-A

UPA1770G-E1-A

UPA1770G - SWITCHING DUAL P-CHAN

Renesas
2,045 -

RFQ

Bulk - Obsolete 2 N-Channel (Dual) Standard 20V 6A (Ta) 37mOhm @ 3A, 4.5V 1.5V @ 1mA 11nC @ 4.5V 1300pF @ 10V 750mW (Ta) 150°C Surface Mount
DF23MR12W1M1B11BOMA1244

DF23MR12W1M1B11BOMA1244

DF23MR12 - INSULATED GATE BIPOLA

Infineon Technologies
3,681 -

RFQ

DF23MR12W1M1B11BOMA1244

Ficha técnica

Bulk * Active - - - - - - - - - - -
FD1400R12IP4DBOSA1

FD1400R12IP4DBOSA1

FD1400R12 - INSULATED GATE BIPOL

Infineon Technologies
2,009 -

RFQ

FD1400R12IP4DBOSA1

Ficha técnica

Bulk * Active - - - - - - - - - - -
GE12047BCA3

GE12047BCA3

1200V 475A SiC Dual Module

General Electric
3,268 -

RFQ

GE12047BCA3

Ficha técnica

Box SiC Power Active 2 Independent Silicon Carbide (SiC) 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) Chassis Mount
GE12047CCA3

GE12047CCA3

1200V 475A SIC HALF-BRIDGE MODUL

General Electric
2,313 -

RFQ

GE12047CCA3

Ficha técnica

Box SiC Power Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) Chassis Mount
GE17042CCA3

GE17042CCA3

1700V 425A SIC HALF-BRIDGE MODUL

General Electric
2,741 -

RFQ

GE17042CCA3

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 18V 29100pF @ 900V 1250W 175°C (TJ) Chassis Mount
GE17042BCA3

GE17042BCA3

1700V 425A SIC DUAL MODULE

General Electric
3,101 -

RFQ

GE17042BCA3

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 18V 29100pF @ 900V 1250W 175°C (TJ) Chassis Mount
GE17045EEA3

GE17045EEA3

1700V 425A SiC Six-Pack Module

General Electric
3,747 -

RFQ

GE17045EEA3

Ficha técnica

Bulk SiC Power Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) Chassis Mount
SSM6N7002KFU,LF

SSM6N7002KFU,LF

MOSFET 2N-CH 60V 0.3A

Toshiba Semiconductor and Storage
3,127 -

RFQ

SSM6N7002KFU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 60V 300mA 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 40pF @ 10V 285mW 150°C (TJ) Surface Mount
DMN53D0LDW-13

DMN53D0LDW-13

MOSFET 2N-CH 50V 0.36A SOT363

Diodes Incorporated
2,952 -

RFQ

DMN53D0LDW-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 50V 360mA 1.6Ohm @ 500mA, 10V 1.5V @ 250µA 0.6nC @ 4.5V 46pF @ 25V 310mW -55°C ~ 150°C (TJ) Surface Mount
NTJD5121NT1G

NTJD5121NT1G

MOSFET 2N-CH 60V 295MA SOT363

onsemi
3,382 -

RFQ

NTJD5121NT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active 2 N-Channel (Dual) Logic Level Gate 60V 295mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW -55°C ~ 150°C (TJ) Surface Mount
2N7002DW-7-F

2N7002DW-7-F

MOSFET 2N-CH 60V 0.23A SOT-363

Diodes Incorporated
2,050 -

RFQ

2N7002DW-7-F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 60V 230mA 7.5Ohm @ 50mA, 5V 2V @ 250µA - 50pF @ 25V 310mW -55°C ~ 150°C (TJ) Surface Mount
DMN65D8LDW-7

DMN65D8LDW-7

MOSFET 2N-CH 60V 0.18A SOT363

Diodes Incorporated
2,108 -

RFQ

DMN65D8LDW-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 60V 180mA 6Ohm @ 115mA, 10V 2V @ 250µA 0.87nC @ 10V 22pF @ 25V 300mW -55°C ~ 150°C (TJ) Surface Mount
EM6K34T2CR

EM6K34T2CR

MOSFET 2N-CH 50V 0.2A EMT6

Rohm Semiconductor
2,387 -

RFQ

EM6K34T2CR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate, 0.9V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V 120mW 150°C (TJ) Surface Mount
2N7002DWQ-7-F

2N7002DWQ-7-F

MOSFET 2N-CH 60V 0.23A SOT363

Diodes Incorporated
3,610 -

RFQ

2N7002DWQ-7-F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 60V 230mA 7.5Ohm @ 50mA, 5V 2V @ 250µA - 50pF @ 25V 310mW -55°C ~ 150°C (TJ) Surface Mount
2N7002BKS,115

2N7002BKS,115

MOSFET 2N-CH 60V 0.3A 6TSSOP

Nexperia USA Inc.
2,891 -

RFQ

2N7002BKS,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active 2 N-Channel (Dual) Logic Level Gate 60V 300mA 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 50pF @ 10V 295mW 150°C (TJ) Surface Mount
BSS138PS,115

BSS138PS,115

MOSFET 2N-CH 60V 0.32A 6TSSOP

Nexperia USA Inc.
3,623 -

RFQ

BSS138PS,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active 2 N-Channel (Dual) Logic Level Gate 60V 320mA 1.6Ohm @ 300mA, 10V 1.5V @ 250µA 0.8nC @ 4.5V 50pF @ 10V 420mW 150°C (TJ) Surface Mount
DMN32D2LDF-7

DMN32D2LDF-7

MOSFET 2N-CH 30V 0.4A SOT353

Diodes Incorporated
3,442 -

RFQ

DMN32D2LDF-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Source Logic Level Gate 30V 400mA 1.2Ohm @ 100mA, 4V 1.2V @ 250µA - 39pF @ 3V 280mW -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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