Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
KSC2688OSTU

KSC2688OSTU

TRANS NPN 300V 0.2A TO126

onsemi
3,131 -

RFQ

KSC2688OSTU

Ficha técnica

Tube - Obsolete NPN 200 mA 300 V 1.5V @ 5mA, 50mA 100µA (ICBO) 60 @ 10mA, 10V 1.25 W 80MHz 150°C (TJ) Through Hole
FPN330A

FPN330A

TRANS NPN 30V 3A TO226

onsemi
3,398 -

RFQ

FPN330A

Ficha técnica

Bulk - Obsolete NPN 3 A 30 V 450mV @ 100mA, 1A 100nA (ICBO) 250 @ 100mA, 2V 1 W 100MHz -55°C ~ 150°C (TJ) Through Hole
KSC2688YSTSSTU

KSC2688YSTSSTU

TRANS NPN 300V 0.2A TO126

onsemi
3,595 -

RFQ

KSC2688YSTSSTU

Ficha técnica

Tube - Obsolete NPN 200 mA 300 V 1.5V @ 5mA, 50mA 100µA (ICBO) 100 @ 10mA, 10V 1.25 W 80MHz 150°C (TJ) Through Hole
2SA949-Y(T6ONK1,FM

2SA949-Y(T6ONK1,FM

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,013 -

RFQ

2SA949-Y(T6ONK1,FM

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(T6SHRP,FM

2SA949-Y(T6SHRP,FM

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,275 -

RFQ

2SA949-Y(T6SHRP,FM

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y(TE6,F,M)

2SA949-Y(TE6,F,M)

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,337 -

RFQ

2SA949-Y(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y,F(J

2SA949-Y,F(J

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,857 -

RFQ

2SA949-Y,F(J

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y,ONK-1F(J

2SA949-Y,ONK-1F(J

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,275 -

RFQ

2SA949-Y,ONK-1F(J

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA949-Y,ONK-1F(M

2SA949-Y,ONK-1F(M

TRANS PNP 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,806 -

RFQ

2SA949-Y,ONK-1F(M

Ficha técnica

Bulk - Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,202 -

RFQ

2SA965-O(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-O,F(J

2SA965-O,F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,593 -

RFQ

2SA965-O,F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y(F,M)

2SA965-Y(F,M)

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,361 -

RFQ

2SA965-Y(F,M)

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y(T6CANO,FM

2SA965-Y(T6CANO,FM

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,024 -

RFQ

2SA965-Y(T6CANO,FM

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,F(J

2SA965-Y,F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,040 -

RFQ

2SA965-Y,F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,SWFF(M

2SA965-Y,SWFF(M

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,124 -

RFQ

2SA965-Y,SWFF(M

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,T6F(J

2SA965-Y,T6F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,503 -

RFQ

2SA965-Y,T6F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,T6KOJPF(J

2SA965-Y,T6KOJPF(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,142 -

RFQ

2SA965-Y,T6KOJPF(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SB1375,CLARIONF(M

2SB1375,CLARIONF(M

TRANS PNP 60V 3A TO220NIS

Toshiba Semiconductor and Storage
3,199 -

RFQ

2SB1375,CLARIONF(M

Ficha técnica

Bulk - Obsolete PNP 3 A 60 V 1.5V @ 200mA, 2A 10µA (ICBO) 100 @ 500mA, 5V 2 W 9MHz 150°C (TJ) Through Hole
2SB1457(T6CANO,F,M

2SB1457(T6CANO,F,M

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
3,570 -

RFQ

2SB1457(T6CANO,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(T6CNO,A,F)

2SB1457(T6CNO,A,F)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,253 -

RFQ

2SB1457(T6CNO,A,F)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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