Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
KSC3953CS

KSC3953CS

TRANS NPN 120V 0.2A TO126-3

onsemi
2,282 -

RFQ

KSC3953CS

Ficha técnica

Bulk - Obsolete NPN 200 mA 120 V 1V @ 3mA, 30mA 100nA (ICBO) 40 @ 10mA, 10V 1.3 W 400MHz 150°C (TJ) Through Hole
KSC3503DSTSSTU

KSC3503DSTSSTU

TRANS NPN 300V 0.1A TO126-3

onsemi
3,543 -

RFQ

KSC3503DSTSSTU

Ficha técnica

Tube - Obsolete NPN 100 mA 300 V 600mV @ 2mA, 20mA 100nA (ICBO) 60 @ 10mA, 10V 7 W 150MHz -55°C ~ 150°C (TJ) Through Hole
KSC3953CSTU

KSC3953CSTU

TRANS NPN 120V 0.2A TO126-3

onsemi
2,869 -

RFQ

KSC3953CSTU

Ficha técnica

Tube - Obsolete NPN 200 mA 120 V 1V @ 3mA, 30mA 100nA (ICBO) 40 @ 10mA, 10V 1.3 W 400MHz 150°C (TJ) Through Hole
KSC2682OSTU

KSC2682OSTU

TRANS NPN 180V 0.1A TO126-3

onsemi
3,717 -

RFQ

KSC2682OSTU

Ficha técnica

Tube - Obsolete NPN 100 mA 180 V 500mV @ 5mA, 50mA 1µA (ICBO) 100 @ 10mA, 5V 1.2 W 200MHz 150°C (TJ) Through Hole
KSC3953DS

KSC3953DS

TRANS NPN 120V 0.2A TO126-3

onsemi
3,976 -

RFQ

KSC3953DS

Ficha técnica

Bulk - Obsolete NPN 200 mA 120 V 1V @ 3mA, 30mA 100nA (ICBO) 60 @ 10mA, 10V 1.3 W 400MHz 150°C (TJ) Through Hole
KSC2682YS

KSC2682YS

TRANS NPN 180V 0.1A TO126-3

onsemi
2,732 -

RFQ

KSC2682YS

Ficha técnica

Bulk - Obsolete NPN 100 mA 180 V 500mV @ 5mA, 50mA 1µA (ICBO) 160 @ 10mA, 5V 1.2 W 200MHz 150°C (TJ) Through Hole
KSC2682OS

KSC2682OS

TRANS NPN 180V 0.1A TO126-3

onsemi
3,729 -

RFQ

KSC2682OS

Ficha técnica

Bulk - Obsolete NPN 100 mA 180 V 500mV @ 5mA, 50mA 1µA (ICBO) 100 @ 10mA, 5V 1.2 W 200MHz 150°C (TJ) Through Hole
KSC2682YSTU

KSC2682YSTU

TRANS NPN 180V 0.1A TO126-3

onsemi
2,450 -

RFQ

KSC2682YSTU

Ficha técnica

Tube - Obsolete NPN 100 mA 180 V 500mV @ 5mA, 50mA 1µA (ICBO) 160 @ 10mA, 5V 1.2 W 200MHz 150°C (TJ) Through Hole
KSC2258STU

KSC2258STU

TRANS NPN 250V 0.1A TO126-3

onsemi
3,065 -

RFQ

KSC2258STU

Ficha técnica

Tube - Obsolete NPN 100 mA 250 V 1.2V @ 5mA, 50mA - 40 @ 40mA, 20V 4 W 100MHz 150°C (TJ) Through Hole
TN6719A

TN6719A

TRANS NPN 300V 0.2A TO226-3

onsemi
3,972 -

RFQ

TN6719A

Ficha técnica

Bulk - Obsolete NPN 200 mA 300 V 750mV @ 3mA, 30mA 100nA (ICBO) 40 @ 30mA, 10V 1 W - -55°C ~ 150°C (TJ) Through Hole
FMB857B

FMB857B

TRANS PNP 45V 0.5A SUPERSOT-6

onsemi
2,668 -

RFQ

FMB857B

Ficha técnica

Tape & Reel (TR) - Obsolete PNP 500 mA 45 V 650mV @ 5mA, 100mA 15nA (ICBO) 220 @ 2mA, 5V 700 mW - -55°C ~ 150°C (TJ) Surface Mount
2SA1761,T6F(M

2SA1761,T6F(M

TRANS PNP 50V 3A TO92MOD

Toshiba Semiconductor and Storage
3,201 -

RFQ

2SA1761,T6F(M

Ficha técnica

Bulk - Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1837(LBSAN,F,M)

2SA1837(LBSAN,F,M)

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,463 -

RFQ

2SA1837(LBSAN,F,M)

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837(PAIO,F,M)

2SA1837(PAIO,F,M)

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,712 -

RFQ

2SA1837(PAIO,F,M)

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,F(J

2SA1837,F(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,173 -

RFQ

2SA1837,F(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,HFEMBJF(J

2SA1837,HFEMBJF(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,726 -

RFQ

2SA1837,HFEMBJF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,HFEYHF(J

2SA1837,HFEYHF(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,114 -

RFQ

2SA1837,HFEYHF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,HFEYHF(M

2SA1837,HFEYHF(M

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,392 -

RFQ

2SA1837,HFEYHF(M

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,NSEIKIF(J

2SA1837,NSEIKIF(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,615 -

RFQ

2SA1837,NSEIKIF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,S1CSF(J

2SA1837,S1CSF(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,902 -

RFQ

2SA1837,S1CSF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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