Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA1837,TOA1F(J

2SA1837,TOA1F(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,662 -

RFQ

2SA1837,TOA1F(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,WNLF(J

2SA1837,WNLF(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,607 -

RFQ

2SA1837,WNLF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,YHF(J

2SA1837,YHF(J

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,048 -

RFQ

2SA1837,YHF(J

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1837,YHF(M

2SA1837,YHF(M

TRANS PNP 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,421 -

RFQ

2SA1837,YHF(M

Ficha técnica

Bulk - Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) Through Hole
2SA1869-Y(JKT,Q,M)

2SA1869-Y(JKT,Q,M)

TRANS PNP 50V 3A TO220NIS

Toshiba Semiconductor and Storage
2,958 -

RFQ

2SA1869-Y(JKT,Q,M)

Ficha técnica

Bulk - Obsolete PNP 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 10 W 100MHz 150°C (TJ) Through Hole
2SA1869-Y(Q,M)

2SA1869-Y(Q,M)

TRANS PNP 50V 3A TO220NIS

Toshiba Semiconductor and Storage
2,528 -

RFQ

2SA1869-Y(Q,M)

Ficha técnica

Bulk - Obsolete PNP 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 10 W 100MHz 150°C (TJ) Through Hole
2SA1930,LBS2DIAQ(J

2SA1930,LBS2DIAQ(J

TRANS PNP 180V 2A TO220NIS

Toshiba Semiconductor and Storage
3,766 -

RFQ

2SA1930,LBS2DIAQ(J

Ficha técnica

Bulk - Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SA1930,ONKQ(J

2SA1930,ONKQ(J

TRANS PNP 180V 2A TO220NIS

Toshiba Semiconductor and Storage
3,245 -

RFQ

2SA1930,ONKQ(J

Ficha técnica

Bulk - Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SA1930,Q(J

2SA1930,Q(J

TRANS PNP 180V 2A TO220NIS

Toshiba Semiconductor and Storage
2,929 -

RFQ

2SA1930,Q(J

Ficha técnica

Bulk - Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SA1931(NOMARK,A,Q

2SA1931(NOMARK,A,Q

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,908 -

RFQ

2SA1931(NOMARK,A,Q

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,BOSCHQ(J

2SA1931,BOSCHQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
3,755 -

RFQ

2SA1931,BOSCHQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,KEHINQ(M

2SA1931,KEHINQ(M

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,048 -

RFQ

2SA1931,KEHINQ(M

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,NETQ(J

2SA1931,NETQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,978 -

RFQ

2SA1931,NETQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
2SA1931,NETQ(M

2SA1931,NETQ(M

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,746 -

RFQ

2SA1931,NETQ(M

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
PZTA27

PZTA27

TRANS NPN DARL 60V 0.8A SOT223-4

onsemi
3,421 -

RFQ

PZTA27

Ficha técnica

Tape & Reel (TR) - Obsolete NPN - Darlington 800 mA 60 V 1.5V @ 100µA, 100mA 500nA 10000 @ 100mA, 5V 1 W 125MHz -55°C ~ 150°C (TJ) Surface Mount
FPN430

FPN430

TRANS PNP 30V 2A TO226

onsemi
3,103 -

RFQ

FPN430

Ficha técnica

Bulk - Obsolete PNP 2 A 30 V 500mV @ 100mA, 1A 100nA (ICBO) 100 @ 100mA, 2V 1 W 100MHz -55°C ~ 150°C (TJ) Through Hole
PN3568

PN3568

TRANS NPN 60V 1A TO92-3

onsemi
3,250 -

RFQ

PN3568

Ficha técnica

Bulk - Obsolete NPN 1 A 60 V 250mV @ 15mA, 150mA 50nA (ICBO) 40 @ 150mA, 1V 625 mW - -55°C ~ 150°C (TJ) Through Hole
MJE210STU

MJE210STU

TRANS PNP 25V 5A TO126-3

onsemi
2,941 -

RFQ

MJE210STU

Ficha técnica

Bulk,Tube,Tube,Tube - Obsolete PNP 5 A 25 V 1.8V @ 1A, 5A 100nA (ICBO) 45 @ 2A, 1V 15 W 65MHz 150°C (TJ) Through Hole
TN6705A

TN6705A

TRANS NPN 45V 1.5A TO226-3

onsemi
2,955 -

RFQ

TN6705A

Ficha técnica

Bulk - Obsolete NPN 1.5 A 45 V 1V @ 100mA, 1A 100nA (ICBO) 40 @ 250mA, 2V 1 W - -55°C ~ 150°C (TJ) Through Hole
2SA1931,NIKKIQ(J

2SA1931,NIKKIQ(J

TRANS PNP 50V 5A TO220NIS

Toshiba Semiconductor and Storage
2,795 -

RFQ

2SA1931,NIKKIQ(J

Ficha técnica

Bulk - Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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