Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA1428-O,T2CLAF(J

2SA1428-O,T2CLAF(J

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,417 -

RFQ

2SA1428-O,T2CLAF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-O,T2CLAF(M

2SA1428-O,T2CLAF(M

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,982 -

RFQ

2SA1428-O,T2CLAF(M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-O,T2WNLF(J

2SA1428-O,T2WNLF(J

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,662 -

RFQ

2SA1428-O,T2WNLF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-Y(T2TR,A,F

2SA1428-Y(T2TR,A,F

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
2,362 -

RFQ

2SA1428-Y(T2TR,A,F

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-Y,T2F(J

2SA1428-Y,T2F(J

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
2,826 -

RFQ

2SA1428-Y,T2F(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-Y,T2F(M

2SA1428-Y,T2F(M

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,044 -

RFQ

2SA1428-Y,T2F(M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1429-Y(T2OMI,FM

2SA1429-Y(T2OMI,FM

TRANS PNP 80V 2A MSTM

Toshiba Semiconductor and Storage
2,740 -

RFQ

2SA1429-Y(T2OMI,FM

Ficha técnica

Bulk - Obsolete PNP 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 80MHz 150°C (TJ) Through Hole
2SA1429-Y(T2TR,F,M

2SA1429-Y(T2TR,F,M

TRANS PNP 80V 2A MSTM

Toshiba Semiconductor and Storage
2,567 -

RFQ

2SA1429-Y(T2TR,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 80MHz 150°C (TJ) Through Hole
2SA1680(F,M)

2SA1680(F,M)

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,617 -

RFQ

2SA1680(F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680(T6DNSO,F,M

2SA1680(T6DNSO,F,M

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,383 -

RFQ

2SA1680(T6DNSO,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,F(J

2SA1680,F(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,064 -

RFQ

2SA1680,F(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,T6ASTIF(J

2SA1680,T6ASTIF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,169 -

RFQ

2SA1680,T6ASTIF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,T6F(J

2SA1680,T6F(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,656 -

RFQ

2SA1680,T6F(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,T6SCMDF(J

2SA1680,T6SCMDF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,774 -

RFQ

2SA1680,T6SCMDF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1761,F(J

2SA1761,F(J

TRANS PNP 50V 3A TO92MOD

Toshiba Semiconductor and Storage
2,900 -

RFQ

2SA1761,F(J

Ficha técnica

Bulk - Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1761,T6F(J

2SA1761,T6F(J

TRANS PNP 50V 3A TO92MOD

Toshiba Semiconductor and Storage
3,180 -

RFQ

2SA1761,T6F(J

Ficha técnica

Bulk - Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
KSD794AYS

KSD794AYS

TRANS NPN 60V 3A TO126-3

onsemi
2,428 -

RFQ

KSD794AYS

Ficha técnica

Bulk - Obsolete NPN 3 A 60 V 2V @ 150mA, 1.5A 1µA (ICBO) 160 @ 500mA, 5V 1 W 60MHz 150°C (TJ) Through Hole
KSC3503ESTU

KSC3503ESTU

TRANS NPN 300V 0.1A TO126-3

onsemi
3,290 -

RFQ

KSC3503ESTU

Ficha técnica

Tube - Obsolete NPN 100 mA 300 V 600mV @ 2mA, 20mA 100nA (ICBO) 100 @ 10mA, 10V 7 W 150MHz -55°C ~ 150°C (TJ) Through Hole
KSC3502ES

KSC3502ES

TRANS NPN 200V 0.1A TO126-3

onsemi
3,165 -

RFQ

KSC3502ES

Ficha técnica

Bulk - Obsolete NPN 100 mA 200 V 600mV @ 2mA, 20mA 100nA (ICBO) 100 @ 10mA, 10V 1.2 W 150MHz 150°C (TJ) Through Hole
KSC3502ESTU

KSC3502ESTU

TRANS NPN 200V 0.1A TO126-3

onsemi
3,955 -

RFQ

KSC3502ESTU

Ficha técnica

Tube - Obsolete NPN 100 mA 200 V 600mV @ 2mA, 20mA 100nA (ICBO) 100 @ 10mA, 10V 1.2 W 150MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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