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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FSV1060VDIODE SCHOTTKY 60V 10A TO277-3 onsemi |
2,103 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 550pF @ 4V, 1MHz | - | 220 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 520 mV @ 10 A | |
|
BAS32L,115NEXPERIA BAS32L - RECTIFIER DIOD Rochester Electronics, LLC |
3,656,667 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 200mA (DC) | 200°C (Max) | 1 V @ 100 mA | |
|
MUR420GDIODE GEN PURP 200V 4A DO201AD onsemi |
2,401 | - |
RFQ |
Ficha técnica |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
|
PMEG3002EEFZPMEG3002EEF - 30 V, 0.2 A LOW VF Rochester Electronics, LLC |
2,662,463 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
PDS5100H-13DIODE SCHOTTKY 100V 5A POWERDI5 Diodes Incorporated |
3,696 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 710 mV @ 5 A | |
|
BAT54SW,115NEXPERIA BAT54SW - RECTIFIER DIO Rochester Electronics, LLC |
1,569,946 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
PDS5100HQ-13DIODE SCHOTTKY 100V 5A POWERDI5 Diodes Incorporated |
3,278 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 710 mV @ 5 A |
|
BAS70L/S500YLBAS70L - GENERAL-PURPOSE SCHOTTK Rochester Electronics, LLC |
1,249,999 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
STTH2002G-TRDIODE GEN PURP 200V 20A D2PAK STMicroelectronics |
3,300 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 10 µA @ 200 V | 200 V | 20A | 175°C (Max) | 1.1 V @ 20 A | |
|
BAS16W,135NOW NEXPERIA BAS16W - RECTIFIER Rochester Electronics, LLC |
2,668 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101, BAS16 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 175mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA |
|
VS-80EBU04DIODE GEN PURP 400V 80A POWIRTAB Vishay General Semiconductor - Diodes Division |
2,455 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 µA @ 400 V | 400 V | 80A | - | 1.3 V @ 80 A |
|
|
VS-60APH03L-N3DIODE GP 300V 60A TO247AD-3 Vishay General Semiconductor - Diodes Division |
2,222 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 10 µA @ 300 V | 300 V | 60A | -55°C ~ 175°C | 1.45 V @ 60 A |
|
1N4248/TRRECTIFIER UFR,FRR Microchip Technology |
3,745 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
1N4534URDIODE SWITCHING Microchip Technology |
2,061 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
MBR8170TFSTXG170V 8A SCHOTTKY onsemi |
3,070 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 237pF @ 1V, 1MHz | - | 30 µA @ 170 V | 170 V | 8A (DC) | -55°C ~ 175°C | 890 mV @ 8 A | |
|
|
1N3611E3RECTIFIER STANDARD RECOVERY GLAS Microchip Technology |
3,166 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
PDU620-13DIODE GEN PURP 200V 6A POWERDI5 Diodes Incorporated |
3,439 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 6A | -65°C ~ 175°C | 940 mV @ 6 A | |
|
|
BAS16W,115NEXPERIA BAS16W - RECTIFIER DIOD Rochester Electronics, LLC |
836,899 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101, BAS16 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 175mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA |
|
TSP12U120SDIODE SCHOTTKY 120V 12A TO277A Taiwan Semiconductor Corporation |
3,190 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 12A | -55°C ~ 150°C | 780 mV @ 12 A | |
|
PMBD914,215NEXPERIA PMBD914 - RECTIFIER DIO Rochester Electronics, LLC |
790,105 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 100 V | 215mA (DC) | 150°C (Max) | 1.25 V @ 150 mA |
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