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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SK20H45 R0GDIODE SCHOTTKY 45V 20A R-6 Taiwan Semiconductor Corporation |
3,975 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 45 V | 45 V | 20A | 200°C (Max) | 550 mV @ 20 A | |
|
SS115L RUGDIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,987 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | |
|
|
SS22L RUGDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
3,199 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
|
SFF2006GHC0GDIODE GEN PURP 400V 20A ITO220AB Taiwan Semiconductor Corporation |
3,721 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 20A | -55°C ~ 150°C | 1.3 V @ 10 A |
|
S4ADIODE GEN PURP 50V 4A DO214AB Taiwan Semiconductor Corporation |
3,599 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
|
S4BDIODE GEN PURP 100V 4A DO214AB Taiwan Semiconductor Corporation |
3,502 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
SF44GHR0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
3,059 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
|
|
SF45GHR0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
2,140 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
|
|
SF46GHR0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,134 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
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|
SFS1605G MNGDIODE GEN PURP 300V 16A TO263AB Taiwan Semiconductor Corporation |
3,254 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
SFS1606G MNGDIODE GEN PURP 400V 16A TO263AB Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
SR1204HR0GDIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
3,962 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A |
|
SF1008G C0GDIODE GEN PURP 600V 10A TO220AB Taiwan Semiconductor Corporation |
3,608 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
|
SF66G A0GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
3,782 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A | |
|
S10KC R7GDIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation |
3,381 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
S12GC R7GDIODE GEN PURP 400V 12A DO214AB Taiwan Semiconductor Corporation |
3,816 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 12A | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
|
S10MC R7GDIODE GEN PURP 1KV 10A DO214AB Taiwan Semiconductor Corporation |
2,633 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
SFS1608G MNGDIODE GEN PURP 600V 16A TO263AB Taiwan Semiconductor Corporation |
3,570 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
TST20H100CW C0GDIODE SCHOTTKY 100V 10A TO220AB Taiwan Semiconductor Corporation |
3,769 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 790 mV @ 10 A | |
|
|
TST30L120CW C0GDIODE SCHOTTKY 120V 15A TO220AB Taiwan Semiconductor Corporation |
3,588 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 120 V | 120 V | 15A | -55°C ~ 150°C | 880 mV @ 15 A |
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