Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
HS5D V7G DIODE GEN PURP 200V 5A DO214AB Taiwan Semiconductor Corporation	5,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	5A	-55°C ~ 150°C	1 V @ 5 A
TSSE3U45H DIODE SCHOTTKY 45V 3A SOD123HE Taiwan Semiconductor Corporation	2,970	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	1 mA @ 45 V	45 V	3A	-55°C ~ 150°C	470 mV @ 3 A
SF2005G C0G DIODE GEN PURP 300V 20A TO220AB Taiwan Semiconductor Corporation	3,785	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
SF2006G C0G DIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation	2,165	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
S8JCHR7G DIODE GEN PURP 600V 8A DO214AB Taiwan Semiconductor Corporation	2,230	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	48pF @ 4V, 1MHz	-	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	985 mV @ 8 A
SF62G DIODE GEN PURP 6A 100V DO-201AD Taiwan Semiconductor Corporation	2,092	-	RFQ		Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	6A (DC)	-55°C ~ 150°C	975 mV @ 6 A
SFAF508G C0G DIODE GEN PURP 600V 5A ITO220AC Taiwan Semiconductor Corporation	2,308	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	5A	-55°C ~ 150°C	1.7 V @ 5 A
S3K V7G DIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation	3,805	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 800 V	800 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
ES3FB R5G DIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation	3,835	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	41pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1.13 V @ 3 A
PUUP3DH 25NS, 3A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	6,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	47pF @ 4V, 1MHz	25 ns	2 µA @ 200 V	200 V	3A (DC)	-55°C ~ 175°C	930 mV @ 3 A
PUUP3BH 25NS, 3A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	6,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	47pF @ 4V, 1MHz	25 ns	2 µA @ 100 V	100 V	3A (DC)	-55°C ~ 175°C	930 mV @ 3 A
HS2K R5G DIODE GEN PURP 800V 2A DO214AA Taiwan Semiconductor Corporation	2,450	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
TPAR3G S1G DIODE AVALANCHE 400V 3A TO277A Taiwan Semiconductor Corporation	3,777	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	58pF @ 4V, 1MHz	120 ns	10 µA @ 400 V	400 V	3A	-55°C ~ 175°C	1.55 V @ 3 A
PU4BCH 25NS, 4A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	3,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	78pF @ 4V, 1MHz	25 ns	2 µA @ 100 V	100 V	4A (DC)	-55°C ~ 175°C	930 mV @ 4 A
SR804 DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	3,869	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	8A	-55°C ~ 125°C	550 mV @ 8 A
SR806 R0G DIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation	3,362	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	8A	-55°C ~ 150°C	700 mV @ 8 A
SR506 A0G DIODE SCHOTTKY 60V 5A DO201AD Taiwan Semiconductor Corporation	954	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	700 mV @ 5 A
SK56B R5G DIODE SCHOTTKY 60V 5A DO214AA Taiwan Semiconductor Corporation	3,779	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	750 mV @ 5 A
SR210 A0G DIODE SCHOTTKY 100V 2A DO204AC Taiwan Semiconductor Corporation	3,556	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	2A	-55°C ~ 150°C	850 mV @ 2 A
SF34G R0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	2,392	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A