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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S10KC V7GDIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation |
3,541 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
HER102GDIODE GEN PURP 1A 100V DO-41 Taiwan Semiconductor Corporation |
3,092 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
S10MC V7GDIODE GEN PURP 1KV 10A DO214AB Taiwan Semiconductor Corporation |
2,028 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
SS320HDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,254 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
|
SS110LHRVGDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,778 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
SS315HDIODE SCHOTTKY 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,497 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SS14LHRUGDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
2,020 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
ES3J V6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,378 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | - | |
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|
SRAS20100 MNGDIODE SCHOTTKY 100V 20A TO263AB Taiwan Semiconductor Corporation |
2,441 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
|
SRAS2040 MNGDIODE SCHOTTKY 40V 20A TO263AB Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
MUR320SBHM4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,334 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
|
|
MUR340SBHM4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
3,894 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A |
|
|
MUR360SBHM4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
3,050 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A |
|
MBR745DIODE SCHOTTKY 45V 7.5A TO220AC Taiwan Semiconductor Corporation |
3,264 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | -55°C ~ 150°C | - | ||
|
SF1005G C0GDIODE GEN PURP 300V 10A TO220AB Taiwan Semiconductor Corporation |
3,426 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 5 A | |
|
|
SFS1604G MNGDIODE GEN PURP 200V 16A TO263AB Taiwan Semiconductor Corporation |
2,248 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
HS2J R5GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,655 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
TSPB10U45S S1GDIODE SCHOTTKY 45V 10A SMPC4.0 Taiwan Semiconductor Corporation |
2,605 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 460 mV @ 10 A | |
|
SFF2008G C0GDIODE GEN PURP 600V 20A ITO220AB Taiwan Semiconductor Corporation |
3,143 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
SK15H45 R0GDIODE SCHOTTKY 45V 15A R-6 Taiwan Semiconductor Corporation |
3,130 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 45 V | 45 V | 15A | 200°C (Max) | 560 mV @ 15 A |
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