Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
PUUP8DH

PUUP8DH

25NS, 8A, 200V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation
12,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 96pF @ 4V, 1MHz 25 ns 2 µA @ 200 V 200 V 8A (DC) -55°C ~ 175°C 1.05 V @ 8 A
HS2AA

HS2AA

DIODE GEN PURP 50V 1.5A DO214AC

Taiwan Semiconductor Corporation
3,420 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
S10GC V6G

S10GC V6G

DIODE GEN PURP 400V 10A DO214AB

Taiwan Semiconductor Corporation
2,844 -

RFQ

S10GC V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 10A -55°C ~ 150°C -
HS2BA

HS2BA

DIODE GEN PURP 100V 1.5A DO214AC

Taiwan Semiconductor Corporation
2,958 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SR1040 C0G

SR1040 C0G

DIODE SCHOTTKY 40V 10A TO220AB

Taiwan Semiconductor Corporation
2,607 -

RFQ

SR1040 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 10A -55°C ~ 125°C 550 mV @ 5 A
S10JC V6G

S10JC V6G

DIODE GEN PURP 600V 10A DO214AB

Taiwan Semiconductor Corporation
2,916 -

RFQ

S10JC V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 10A -55°C ~ 150°C -
SR1060 C0G

SR1060 C0G

DIODE SCHOTTKY 60V 10A TO220AB

Taiwan Semiconductor Corporation
2,590 -

RFQ

SR1060 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 10A -55°C ~ 150°C 700 mV @ 5 A
S10KC V6G

S10KC V6G

DIODE GEN PURP 800V 10A DO214AB

Taiwan Semiconductor Corporation
3,756 -

RFQ

S10KC V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 10A -55°C ~ 150°C -
S10MC V6G

S10MC V6G

DIODE GEN PURP 10A DO214AB

Taiwan Semiconductor Corporation
2,472 -

RFQ

S10MC V6G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 1000 V - 10A -55°C ~ 150°C -
SFF1608G C0G

SFF1608G C0G

DIODE GEN PURP 600V 16A ITO220AB

Taiwan Semiconductor Corporation
2,141 -

RFQ

SFF1608G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 16A -55°C ~ 150°C 1.7 V @ 8 A
SFF2006G C0G

SFF2006G C0G

DIODE GEN PURP 400V 20A ITO220AB

Taiwan Semiconductor Corporation
2,479 -

RFQ

SFF2006G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 90pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 20A -55°C ~ 150°C 1.3 V @ 10 A
MBRF10100 C0G

MBRF10100 C0G

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation
2,704 -

RFQ

MBRF10100 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
SS19L RUG

SS19L RUG

DIODE SCHOTTKY 90V 1A SUB SMA

Taiwan Semiconductor Corporation
3,803 -

RFQ

SS19L RUG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 90 V 90 V 1A -55°C ~ 150°C 800 mV @ 1 A
MBR10100

MBR10100

DIODE SCHOTTKY 10A 100V TO220AC

Taiwan Semiconductor Corporation
3,767 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A (DC) -55°C ~ 150°C 850 mV @ 10 A
SK24A R3G

SK24A R3G

DIODE SCHOTTKY 40V 2A DO214AC

Taiwan Semiconductor Corporation
2,485 -

RFQ

SK24A R3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 2A -55°C ~ 125°C 500 mV @ 2 A
SK26A R3G

SK26A R3G

DIODE SCHOTTKY 60V 2A DO214AC

Taiwan Semiconductor Corporation
3,517 -

RFQ

SK26A R3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SS110L RUG

SS110L RUG

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation
3,228 -

RFQ

SS110L RUG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
HS5A

HS5A

DIODE GEN PURP 50V 5A DO214AB

Taiwan Semiconductor Corporation
3,534 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
HS5B

HS5B

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation
3,208 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
S10GC V7G

S10GC V7G

DIODE GEN PURP 400V 10A DO214AB

Taiwan Semiconductor Corporation
3,554 -

RFQ

S10GC V7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.1 V @ 10 A
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15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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