Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IDT08S60CHKSA1

IDT08S60CHKSA1

DIODE SCHOTTKY 600V TO220-2

Infineon Technologies
3,876 -

RFQ

IDT08S60CHKSA1

Ficha técnica

Tube RoHS - - Obsolete - - - - - - - -
IDT10S60CHKSA1

IDT10S60CHKSA1

DIODE SCHOTTKY 600V TO220-2

Infineon Technologies
2,408 -

RFQ

IDT10S60CHKSA1

Ficha técnica

Tube RoHS - - Obsolete - - - - - - - -
IDT16S60CHKSA1

IDT16S60CHKSA1

DIODE SCHOTTKY 600V TO220-2

Infineon Technologies
2,706 -

RFQ

IDT16S60CHKSA1

Ficha técnica

Tube RoHS - - Obsolete - - - - - - - -
BAS2103WE6433HTMA1

BAS2103WE6433HTMA1

DIODE GEN PURP 200V 250MA SOD323

Infineon Technologies
2,287 -

RFQ

BAS2103WE6433HTMA1

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Not For New Designs Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 250mA (DC) 150°C (Max) 1.25 V @ 200 mA
IDH08G120C5XKSA1

IDH08G120C5XKSA1

DIODE SCHOT 1200V 8A TO220-2-1

Infineon Technologies
3,532 -

RFQ

IDH08G120C5XKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 365pF @ 1V, 1MHz 0 ns 40 µA @ 1200 V 1200 V 8A (DC) -55°C ~ 175°C 1.95 V @ 8 A
IDP15E65D1XKSA1

IDP15E65D1XKSA1

DIODE GEN PURP 650V 15A TO220-2

Infineon Technologies
3,057 -

RFQ

IDP15E65D1XKSA1

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 114 ns 40 µA @ 650 V 650 V 15A -40°C ~ 175°C 1.7 V @ 15 A
IDP15E65D2XKSA1

IDP15E65D2XKSA1

DIODE GEN PURP 650V 15A TO220

Infineon Technologies
3,340 -

RFQ

IDP15E65D2XKSA1

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 47 ns 40 µA @ 650 V 650 V 15A -40°C ~ 175°C 2.3 V @ 15 A
IDDD06G65C6XTMA1

IDDD06G65C6XTMA1

SIC DIODES

Infineon Technologies
2,403 -

RFQ

IDDD06G65C6XTMA1

Ficha técnica

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 302pF @ 1V, 1MHz 0 ns 20 µA @ 420 V 650 V 18A (DC) -55°C ~ 175°C -
IDD06SG60CXTMA2

IDD06SG60CXTMA2

DIODE SCHOTTKY 600V 6A TO252-3

Infineon Technologies
3,969 -

RFQ

IDD06SG60CXTMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 130pF @ 1V, 1MHz 0 ns 50 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 2.3 V @ 6 A
BAS1602LE6327XTMA1

BAS1602LE6327XTMA1

DIODE GEN PURP 80V 200MA TSLP-2

Infineon Technologies
3,487 -

RFQ

BAS1602LE6327XTMA1

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Not For New Designs Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 80 V 200mA (DC) 150°C (Max) 1.25 V @ 150 mA
IDL08G65C5XUMA2

IDL08G65C5XUMA2

DIODE SCHOTTKY 650V 8A VSON-4

Infineon Technologies
3,727 -

RFQ

IDL08G65C5XUMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 250pF @ 1V, 1MHz 0 ns 140 µA @ 650 V 650 V 8A (DC) -55°C ~ 150°C 1.7 V @ 8 A
AIDW20S65C5XKSA1

AIDW20S65C5XKSA1

DIODE SCHOTTKY 650V 20A TO247

Infineon Technologies
2,612 -

RFQ

AIDW20S65C5XKSA1

Ficha técnica

Tube Automotive, AEC-Q100/101, CoolSiC™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 584pF @ 1V, 1MHz 0 ns 120 µA @ 650 V 650 V 20A (DC) -40°C ~ 175°C 1.7 V @ 20 A
IDP40E65D2XKSA1

IDP40E65D2XKSA1

DIODE GEN PURP 650V 40A TO220-2

Infineon Technologies
3,416 -

RFQ

IDP40E65D2XKSA1

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 40 µA @ 650 V 650 V 40A -40°C ~ 175°C 2.3 V @ 40 A
IDWD15G120C5XKSA1

IDWD15G120C5XKSA1

SIC SCHOTTKY 1200V 15A TO247-2

Infineon Technologies
2,955 -

RFQ

IDWD15G120C5XKSA1

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1050pF @ 1V, 1MHz 0 ns 124 µA @ 1200 V 1200 V 49A (DC) -55°C ~ 175°C 1.65 V @ 15 A
AIDW30S65C5XKSA1

AIDW30S65C5XKSA1

DIODE SCHOTTKY 650V 30A TO247

Infineon Technologies
2,900 -

RFQ

AIDW30S65C5XKSA1

Ficha técnica

Tube Automotive, AEC-Q100/101, CoolSiC™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 860pF @ 1V, 1MHz 0 ns 120 µA @ 650 V 650 V 30A (DC) -40°C ~ 175°C 1.7 V @ 30 A
IDL10G65C5XUMA2

IDL10G65C5XUMA2

DIODE SCHOTTKY 650V 10A VSON-4

Infineon Technologies
3,803 -

RFQ

IDL10G65C5XUMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 300pF @ 1V, 1MHz 0 ns 180 µA @ 650 V 650 V 10A (DC) -55°C ~ 150°C 1.7 V @ 10 A
IDM08G120C5XTMA1

IDM08G120C5XTMA1

DIODE SCHOTTKY 1200V 8A TO252-2

Infineon Technologies
2,825 -

RFQ

IDM08G120C5XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 365pF @ 1V, 1MHz 0 ns 40 µA @ 1200 V 1200 V 8A (DC) -55°C ~ 175°C 1.95 V @ 8 A
BAS16E6433HTMA1

BAS16E6433HTMA1

DIODE GEN PURP 80V 250MA SOT23-3

Infineon Technologies
2,140,000 -

RFQ

BAS16E6433HTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Not For New Designs Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 80 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
IDH10SG60CXKSA2

IDH10SG60CXKSA2

DIODE SCHOTTKY 600V 10A TO220-2

Infineon Technologies
3,408 -

RFQ

IDH10SG60CXKSA2

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 290pF @ 1V, 1MHz 0 ns 90 µA @ 600 V 600 V 10A (DC) -55°C ~ 175°C 2.1 V @ 10 A
BAL99E6433HTMA1

BAL99E6433HTMA1

DIODE GEN PURP 80V 250MA SOT23-3

Infineon Technologies
120,000 -

RFQ

BAL99E6433HTMA1

Ficha técnica

Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Not For New Designs Surface Mount 1.5pF @ 0V, 1MHz 4 ns 1 µA @ 70 V 80 V 250mA (DC) -65°C ~ 150°C 1.25 V @ 150 mA
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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