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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRTS12100PFST3GDIODE SCHOTTKY 12A 100V TO277-3 onsemi |
3,044 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 930pF @ 1V, 1MHz | - | 120 µA @ 100 V | 100 V | 12A | -55°C ~ 175°C | 800 mV @ 12 A | ||
|
DST3060DJFDIODE SCHOTTKY 60V PDFN5X6-8L Littelfuse Inc. |
2,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 6 mA @ 60 V | 60 V | 30A | -55°C ~ 150°C | 770 mV @ 30 A | |
|
AR4PKHM3_A/IDIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,166 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
|
BYWB29-50HE3_A/PDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
RM 2AVDIODE GEN PURP 600V 1.2A AXIAL Sanken |
3,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
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|
SJPX-F2VDIODE GEN PURP 200V 1.5A SJP Sanken |
2,228 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
|
VFT2080S-M3/4WDIODE SCHOTTKY 20A 80V ITO-220AB Vishay General Semiconductor - Diodes Division |
3,873 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
FFPF08S60SNTUDIODE GEN PURP 600V 8A TO220F-2L onsemi |
3,726 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | 100 µA @ 600 V | 600 V | 8A | -65°C ~ 150°C | 3.4 V @ 8 A | |
|
|
AR4PMHM3_A/HDIODE AVALANCH 1KV 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
|
SF66G A0GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
3,782 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A | |
|
|
RM 2VDIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,870 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
SJPM-H4VRDIODE GEN PURP 400V 2A SJP Sanken |
3,004 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 2A | -40°C ~ 150°C | 1.1 V @ 2 A | |
|
NRVTS12120MFST3GDIODE SCHOTTKY 120V 12A 5DFN onsemi |
2,410 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 75 µA @ 120 V | 120 V | 12A | -55°C ~ 150°C | 830 mV @ 12 A |
|
UPR10/TR13DIODE GEN PURP 100V 2.5A DO216 Microchip Technology |
3,037 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 100 V | 100 V | 2.5A | -55°C ~ 150°C | 975 mV @ 2 A | |
|
|
VS-12TQ035S-M3DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
NHP820LFST1GRECTIFIER 200V 8A onsemi |
2,662 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 1 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 1 V @ 8 A | |
|
|
RN 1ZVDIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,446 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 20 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
SJPB-L6DIODE SCHOTTKY 60V 3A SJP Sanken |
3,244 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 700 mV @ 3 A | |
|
|
DSA15IM45UC-TRLPOWER DIODE DISCRETES-SCHOTTKY T IXYS |
3,884 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 227pF @ 4V, 1MHz | - | 250 µA @ 45 V | 45 V | 15A | -55°C ~ 175°C | 750 mV @ 15 A | ||
|
|
UPR15/TR13DIODE GEN PURP 150V 2.5A DO216 Microchip Technology |
3,688 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 150 V | 150 V | 2.5A | -55°C ~ 150°C | 975 mV @ 2 A |
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