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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RK 36VDIODE SCHOTTKY 60V 2A AXIAL Sanken |
2,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 620 mV @ 2 A | |
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|
SJPB-L6VDIODE SCHOTTKY 60V 3A SJP Sanken |
3,388 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 700 mV @ 3 A | |
|
NRVTS10120EMFST3GDIODE SCHOTTKY 120V 10A 5DFN onsemi |
3,948 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 120 V | 120 V | 10A | -55°C ~ 175°C | 820 mV @ 10 A |
|
IDK03G65C5XTMA2DIODE SCHOTTKY 650V 3A TO263-2 Infineon Technologies |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 100pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.8 V @ 3 A |
|
AR4PJHM3_A/HDIODE AVALANCHE 600V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,577 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
|
BYWB29-100HE3_A/PDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,043 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
RK 39VDIODE SCHOTTKY 90V 2A AXIAL Sanken |
3,481 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 3 mA @ 90 V | 90 V | 2A | -40°C ~ 150°C | 810 mV @ 2 A | |
|
|
SJPE-H4VDIODE SCHOTTKY 40V 2A SJP Sanken |
3,278 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 600 mV @ 2 A | |
|
VS-8ETL06-1-M3DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
DSS16-0045AS-TRLDIODE SCHOTTKY 45V 16A TO263AB IXYS |
3,900 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 16A | -55°C ~ 175°C | 670 mV @ 15 A | |
|
|
AR4PJHM3_A/IDIODE AVALANCHE 600V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
|
|
BYWB29-150HE3_A/PDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,598 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
RM 10VDIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,011 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
SJPL-H2VDIODE GEN PURP 200V 2A SJP Sanken |
2,259 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 200 V | 200 V | 2A | -40°C ~ 150°C | 980 mV @ 2 A | |
|
|
NRVTS12120MFST1GDIODE SCHOTTKY 120V 12A 5DFN onsemi |
3,263 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 75 µA @ 120 V | 120 V | 12A | -55°C ~ 150°C | 830 mV @ 12 A |
|
|
DMA10IM1600PZ-TRLPOWER DIODE DISCRETES-RECTIFIER IXYS |
3,539 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 1600 V | 1600 V | 10A | -55°C ~ 175°C | 1.26 V @ 10 A | |
|
|
AR4PKHM3_A/HDIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
3,906 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
BYWB29-200HE3_A/PDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,914 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
RM 11AVDIODE GEN PURP 600V 1.2A AXIAL Sanken |
2,853 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
SJPM-H4VDIODE GEN PURP 400V 2A SJP Sanken |
3,520 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 2A | -40°C ~ 150°C | 1.1 V @ 2 A |
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