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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SF5400-TR DIODE GEN PURP 50V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,206	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
BYV29F-300HE3_A/P DIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,266	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 300 V	300 V	8A	-40°C ~ 150°C	1.25 V @ 8 A
BYWB29-50-E3/45 DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division	2,714	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	10 µA @ 50 V	50 V	8A	-65°C ~ 150°C	1.3 V @ 20 A
V35DM120-M3/I DIODE SCHOTTKY 120V 6.3A TO263AC Vishay General Semiconductor - Diodes Division	2,770	-	RFQ	Ficha técnica	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	1.2 mA @ 120 V	120 V	6.3A	-40°C ~ 175°C	1.05 V @ 35 A
EL 1ZV1 DIODE GEN PURP 200V 1.5A AXIAL Sanken	3,710	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	50 µA @ 200 V	200 V	1.5A	-40°C ~ 150°C	980 mV @ 1.5 A
ES01A DIODE GEN PURP 600V 700MA AXIAL Sanken	2,240	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 600 V	600 V	700mA	-40°C ~ 150°C	3 V @ 800 mA
CMR3U-01M TR13 PBFREE DIODE GEN PURP 100V 3A SMB Central Semiconductor Corp	2,070	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	5 µA @ 100 V	100 V	3A	-65°C ~ 175°C	1 V @ 3 A
BYV29F-400HE3_A/P DIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,629	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 400 V	400 V	8A	-40°C ~ 150°C	1.25 V @ 8 A
VF20150SG-E3/4W DIODE SCHOTTKY 150V 20A ITO220AB Vishay General Semiconductor - Diodes Division	3,937	-	RFQ	Ficha técnica	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.6 V @ 20 A
SBR20M45D1Q-13 DIODE SBR 45V 20A TO252 Diodes Incorporated	2,798	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Super Barrier	Active	Surface Mount	-	-	100 µA @ 45 V	45 V	20A	-55°C ~ 175°C	610 mV @ 20 A
EM 2AV0 DIODE GEN PURP 600V 1.2A AXIAL Sanken	2,179	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 600 V	600 V	1.2A	-40°C ~ 150°C	920 mV @ 1.2 A
EU1 DIODE GEN PURP 400V 250MA AXIAL Sanken	2,500	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	10 µA @ 400 V	400 V	250mA	-40°C ~ 150°C	2.5 V @ 250 mA
SR1204HR0G DIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation	3,962	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	12A	-50°C ~ 150°C	550 mV @ 12 A
GCQ10A06 DIODE SCHOTTKY 60V 10A TO-220 KYOCERA AVX	2,312	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	5 mA @ 60 V	60 V	10A	-40°C ~ 150°C	580 mV @ 5 A
VS-HFA08TB60HN3 DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division	3,671	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101, HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	37 ns	5 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
VS-ETL1506-1-M3 DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division	3,421	-	RFQ	Ficha técnica	Bulk	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	210 ns	15 µA @ 600 V	600 V	15A	-65°C ~ 175°C	1.07 V @ 15 A
EM 2V0 DIODE GEN PURP 400V 1.2A AXIAL Sanken	2,093	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 400 V	400 V	1.2A	-40°C ~ 150°C	920 mV @ 1.2 A
EU01Z DIODE GEN PURP 200V 250MA AXIAL Sanken	2,202	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	10 µA @ 200 V	200 V	250mA	-40°C ~ 150°C	2.5 V @ 250 mA
BYW29-150-E3/45 DIODE GEN PURP 150V 8A TO220AC Vishay General Semiconductor - Diodes Division	2,730	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	25 ns	10 µA @ 150 V	150 V	8A	-65°C ~ 150°C	1.3 V @ 20 A
MBR30170MFST3G 170V 30A SCHOTTKY onsemi	3,043	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	821pF @ 1V, 1MHz	-	50 µA @ 170 V	170 V	30A (DC)	-55°C ~ 175°C	890 mV @ 30 A