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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EG01CV0DIODE GEN PURP 1KV 500MA AXIAL Sanken |
2,488 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 1000 V | 1000 V | 500mA | -40°C ~ 150°C | 3.3 V @ 500 mA | |
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EG01ADIODE GEN PURP 600V 500MA AXIAL Sanken |
2,454 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 600 V | 600 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |
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BYW74TRDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,807 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
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VS-10ETF10STRR-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
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BYWB29-100-E3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,944 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
FCH30AU10DIODE SCHOTTKY 100V 30A TO-220 F KYOCERA AVX |
2,701 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 940 mV @ 15 A | ||
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|
EG01CWDIODE GEN PURP 1KV 500MA AXIAL Sanken |
2,671 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 1000 V | 1000 V | 500mA | -40°C ~ 150°C | 3.3 V @ 500 mA | |
|
|
EH1DIODE GEN PURP 400V 600MA AXIAL Sanken |
3,253 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 10 µA @ 400 V | 400 V | 600mA | -40°C ~ 150°C | 1.35 V @ 600 mA | |
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BYW84-TRDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,252 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
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VS-10ETF12STRR-M3DIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,502 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
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BYWB29-150-E3/45DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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|
SFS1605G MNGDIODE GEN PURP 300V 16A TO263AB Taiwan Semiconductor Corporation |
3,254 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
EK 14V0DIODE SCHOTTKY 40V 1.5A AXIAL Sanken |
2,015 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 5 mA @ 40 V | 40 V | 1.5A | -40°C ~ 150°C | 550 mV @ 1.5 A | |
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EM01DIODE GEN PURP 400V 1A AXIAL Sanken |
2,313 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
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SF5400-TAPDIODE GEN PURP 50V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,520 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
APT30DQ120KGDIODE GEN PURP 1.2KV 30A TO220 Microchip Technology |
2,662 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 320 ns | 100 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 3.3 V @ 30 A | |
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BYWB29-200-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,751 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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SFS1606G MNGDIODE GEN PURP 400V 16A TO263AB Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
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EL 1ZV0DIODE GEN PURP 200V 1.5A AXIAL Sanken |
2,577 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
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EM01ADIODE GEN PURP 600V 1A AXIAL Sanken |
3,587 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A |
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