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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-30WQ06FNTRRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
2,679 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A |
|
V15P12-M3/HDIODE SCHOTTKY 120V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,718 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 120 V | 120 V | 15A | -40°C ~ 150°C | 810 mV @ 15 A |
|
UGF8GTHE3_A/PDIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,378 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
VBT3045BP-M3/8WDIODE SCHOTTKY 30A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
2,732 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 30A (DC) | -40°C ~ 150°C | 700 mV @ 30 A | |
|
|
V12PM45HM3/HDIODE SCHOTTKY TMBS 12A 45V SMPC Vishay General Semiconductor - Diodes Division |
2,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2350pF @ 4V, 1MHz | - | 500 µA @ 45 V | 45 V | 12A | -40°C ~ 175°C | 600 mV @ 12 A |
|
|
V15P12-M3/IDIODE SCHOTTKY 120V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,898 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 120 V | 120 V | 15A | -40°C ~ 150°C | 810 mV @ 15 A |
|
VS-8ETL06STRLHM3FREDS - D2PAK Vishay General Semiconductor - Diodes Division |
2,549 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
|
VBT3045BP-M3/4WDIODE SCHOTTKY 30A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
2,048 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 30A (DC) | -40°C ~ 150°C | 700 mV @ 30 A | |
|
V12PM45HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,336 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2350pF @ 4V, 1MHz | - | 500 µA @ 45 V | 45 V | 12A | -40°C ~ 175°C | 600 mV @ 12 A |
|
|
V15PM10-M3/HDIODE SCHOTTKY 100V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,210 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 100 V | 100 V | 15A | -40°C ~ 150°C | 750 mV @ 15 A |
|
|
VS-8ETL06STRRHM3FREDS - D2PAK Vishay General Semiconductor - Diodes Division |
3,044 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
VS-16F10DIODE GEN PURP 100V 16A DO203AA Vishay General Semiconductor - Diodes Division |
3,293 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
|
V12PM6HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2050pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 12A | -40°C ~ 175°C | 640 mV @ 12 A |
|
|
V15PM10-M3/IDIODE SCHOTTKY 100V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,268 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 100 V | 100 V | 15A | -40°C ~ 150°C | 750 mV @ 15 A |
|
|
VS-65APF06L-M3RECTIFIER DIODE 60A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,371 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 65A | -40°C ~ 150°C | 1.32 V @ 65 A | |
|
|
V15PM15-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,893 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1030pF @ 4V, 1MHz | - | 300 µA @ 150 V | 150 V | 15A | -40°C ~ 175°C | 1.08 V @ 15 A |
|
1N5404GP-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,619 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
VS-65EPF06L-M3RECTIFIER DIODE 60A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,733 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 65A | -40°C ~ 150°C | 1.32 V @ 65 A | |
|
|
SS10PH9-M3/87ADIODE SCHOTTKY 90V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,112 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 10 µA @ 90 V | 90 V | 10A | -55°C ~ 175°C | 880 mV @ 10 A |
|
|
V12P45-M3/87ADIODE SCHOTTKY 45V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 45 V | 45 V | 4.3A | -40°C ~ 150°C | 580 mV @ 12 A |
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