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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10ETF02-M3DIODE GEN PURP 200V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
V10P12-M3/87ADIODE SCHOTTKY 10A 120V TO-277A Vishay General Semiconductor - Diodes Division |
3,200 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 820 mV @ 10 A | |
|
VS-10TQ045STRRHM3DIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,384 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
|
|
VS-10ETF06-M3DIODE GEN PURP 600V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,451 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
VS-40EPS08-M3DIODE GEN PURP 800V 40A TO247AC Vishay General Semiconductor - Diodes Division |
2,295 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 40A | -40°C ~ 150°C | 1 V @ 20 A | |
|
ES3FHE3_A/HDIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
V10P12-M3/86ADIODE SCHOTTKY 10A 120V TO-277A Vishay General Semiconductor - Diodes Division |
3,726 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 820 mV @ 10 A |
|
|
VS-8TQ100STRLHM3DIODE SCHOTTKY 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
|
VS-10ETF10-M3DIODE GEN PURP 1KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
SE10DD-M3/IDIODE GEN PURP 200V 3A TO263AC Vishay General Semiconductor - Diodes Division |
3,354 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 100 V | 200 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A |
|
FESF16ATHE3_A/PDIODE GEN PURP 50V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,544 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
|
SE10DG-M3/IDIODE GEN PURP 400V 3A TO263AC Vishay General Semiconductor - Diodes Division |
2,683 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A |
|
|
FESF16BTHE3_A/PDIODE GEN PURP 100V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,323 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
S10CGHM3/IDIODE GEN PURP 400V 10A DO214AB Vishay General Semiconductor - Diodes Division |
3,622 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1 V @ 10 A |
|
|
FESF16CTHE3_A/PDIODE GEN PURP 150V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,067 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
VS-16FR40DIODE GEN PURP 400V 16A DO203AA Vishay General Semiconductor - Diodes Division |
2,117 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 400 V | 400 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
|
S10CMHM3/IDIODE GEN PURP 1KV 10A DO214AB Vishay General Semiconductor - Diodes Division |
3,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 1000 V | 1000 V | 10A | -55°C ~ 150°C | 1 V @ 10 A |
|
VI30120S-E3/4WDIODE SCHOTTKY 120V 30A TO262AA Vishay General Semiconductor - Diodes Division |
2,670 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
|
FESF16DTHE3_A/PDIODE GEN PURP 200V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,279 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
|
S8CGHM3/IDIODE GEN PURP 400V 8A DO214AB Vishay General Semiconductor - Diodes Division |
2,101 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 4 µs | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
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