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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAV101-GS18DIODE GEN PURP 100V 250MA SOD80 Vishay General Semiconductor - Diodes Division |
260 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
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1N4148-P-TAPDIODE GEN PURP 75V 2A DO35 Vishay General Semiconductor - Diodes Division |
38,373 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Through Hole | 4pF @ 0V, 1MHz | 8 ns | 5 µA @ 75 V | 75 V | 150mA | 175°C (Max) | 1 V @ 10 mA |
|
VS-12TQ040STRR-M3DIODE SCHOTTKY 40V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,445 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
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AS1PDHM3/85ADIODE AVALANCHE 200V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,658 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
VS-6EWX06FNTRL-M3DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division |
3,521 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 21 ns | 20 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 3.1 V @ 6 A |
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FESB16FTHE3_A/IDIODE GEN PURP 300V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,630 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
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FESB16ATHE3_A/IDIODE GEN PURP 50V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,059 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
VS-25FR10DIODE GEN PURP 100V 25A DO203AA Vishay General Semiconductor - Diodes Division |
2,527 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
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AS1PGHM3/84ADIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,457 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
VS-6EWX06FNTRR-M3DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division |
3,702 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 21 ns | 20 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 3.1 V @ 6 A |
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FESB16GTHE3_A/IDIODE GEN PURP 400V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,140 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
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VB20150SG-E3/8WDIODE SCHOTTKY 150V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,594 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
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FESB16BTHE3_A/IDIODE GEN PURP 100V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,550 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
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AS1PGHM3/85ADIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,196 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
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FESB16HTHE3_A/IDIODE GEN PURP 500V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,071 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A |
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FESB16CTHE3_A/IDIODE GEN PURP 150V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,767 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
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AS1PJHM3/84ADIODE AVALANCHE 600V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,810 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
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FESB16JTHE3_A/IDIODE GEN PURP 600V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,183 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A |
|
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VS-15TQ060STRL-M3DIODE SCHOTTKY 60V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,486 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 720pF @ 5V, 1MHz | - | 800 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 620 mV @ 15 A | |
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FESB16DTHE3_A/IDIODE GEN PURP 200V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,880 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
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