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0Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-12TQ035STRRHM3DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
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VS-12TQ040STRLHM3DIODE SCHOTTKY 40V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,427 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
|
V12PM15HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 175°C | 1.08 V @ 12 A |
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VS-12TQ040STRRHM3DIODE SCHOTTKY 40V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,629 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
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VS-10ETS10S-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
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VS-12TQ045STRLHM3DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,517 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
|
EGP20C-E3/54DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,383 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
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VS-12TQ045STRRHM3DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
|
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EGP20F-E3/54DIODE GEN PURP 300V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,060 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
VF20120S-E3/4WDIODE SCHOTTKY 120V 20A ITO220AB Vishay General Semiconductor - Diodes Division |
2,697 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A |
|
VS-8ETL06FP-N3DIODE GEN PURP 600V 8A TO220 Vishay General Semiconductor - Diodes Division |
2,437 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
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EGP20A-E3/54DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,096 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
FESF16AT-E3/45DIODE GEN PURP 50V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,832 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
SE70PB-M3/87ADIODE GEN PURP 100V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,843 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.5 µs | 20 µA @ 100 V | 100 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
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FESF16BT-E3/45DIODE GEN PURP 100V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,999 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
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SE70PD-M3/87ADIODE GEN PURP 200V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,143 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.5 µs | 20 µA @ 200 V | 200 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
VS-MURB820TRLHM3DIODE GEN PURP 200V 8A TO263 Vishay General Semiconductor - Diodes Division |
2,757 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A |
|
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FESF16CT-E3/45DIODE GEN PURP 150V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,498 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
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SE70PG-M3/87ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A | |
|
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VS-MURB820TRRHM3DIODE GEN PURP 200V 8A TO263 Vishay General Semiconductor - Diodes Division |
3,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A |
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