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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-SD600R32PCDIODE GEN PURP 3.2KV 600A B8 Vishay General Semiconductor - Diodes Division |
2,186 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 3200 V | 3200 V | 600A | -40°C ~ 150°C | 1.44 V @ 1500 A | |
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VS-150UR100DLDIODE GP 1000V 150A DO-8 Vishay General Semiconductor - Diodes Division |
2,555 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1000 V | 150A | -40°C ~ 180°C | 1.47 V @ 600 A | |
|
VS-150UR120DM12DIODE GP 1200V 150A DO-8 Vishay General Semiconductor - Diodes Division |
3,835 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 150A | -40°C ~ 180°C | 1.47 V @ 600 A | |
|
31GF6-E3/73DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,805 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.6 V @ 3 A | |
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SS3H9HE3_B/IDIODE SCHOTTKY 90V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 90 V | 90 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A |
|
VS-16FLR20S02DIODE GEN PURP 200V 16A DO203AA Vishay General Semiconductor - Diodes Division |
2,660 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 1.4 V @ 16 A | |
|
VS-40EPF12-M3DIODE GEN PURP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,077 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 40A | -40°C ~ 150°C | 1.4 V @ 40 A | |
|
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VS-40EPF02-M3DIODE GEN PURP 200V 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,039 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 200 V | 200 V | 40A | -40°C ~ 150°C | 1.25 V @ 40 A | |
|
VS-MBRD320TRL-M3DIODE SCHOTTKY 3A 20V DPAK Vishay General Semiconductor - Diodes Division |
2,634 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 20 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-SD600N28PCDIODE GEN PURP 2.8KV 600A B8 Vishay General Semiconductor - Diodes Division |
2,978 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 2800 V | 2800 V | 600A | -40°C ~ 150°C | 1.44 V @ 1500 A | |
|
|
VS-40EPF04-M3DIODE GEN PURP 400V 40A TO247AC Vishay General Semiconductor - Diodes Division |
2,050 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 400 V | 400 V | 40A | -40°C ~ 150°C | 1.25 V @ 40 A | |
|
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VS-MBRD320TRR-M3DIODE SCHOTTKY 3A 20V DPAK Vishay General Semiconductor - Diodes Division |
2,350 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 20 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-40EPF06-M3DIODE GEN PURP 600V 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 40A | -40°C ~ 150°C | 1.25 V @ 40 A | |
|
|
VS-MBRD330TRL-M3DIODE SCHOTTKY 3A 30V DPAK Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 30 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
|
VS-40EPF10-M3DIODE GEN PURP 1KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,928 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1000 V | 1000 V | 40A | -40°C ~ 150°C | 1.4 V @ 40 A | |
|
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VS-MBRD330TRR-M3DIODE SCHOTTKY 3A 30V DPAK Vishay General Semiconductor - Diodes Division |
2,806 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 30 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-MBRD340TRL-M3DIODE SCHOTTKY 3A 40V DPAK Vishay General Semiconductor - Diodes Division |
2,812 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 40 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
|
VS-MBRD340TRR-M3DIODE SCHOTTKY 3A 40V DPAK Vishay General Semiconductor - Diodes Division |
2,177 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 40 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
VS-1N3624DIODE GEN PURP 700V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,916 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 900 µA @ 700 V | 700 V | 12A | -65°C ~ 200°C | 1.35 V @ 12 A | ||
|
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VS-MBRD320-M3DIODE SCHOTTKY 3A 20V DPAK Vishay General Semiconductor - Diodes Division |
2,049 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 20 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A |
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