Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBP304G C2G

KBP304G C2G

BRIDGE RECT 1PHASE 400V 3A KBP

Taiwan Semiconductor Corporation
3,041 -

RFQ

KBP304G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 3 A 1.1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP305G C2

KBP305G C2

BRIDGE RECT 1PHASE 600V 3A KBP

Taiwan Semiconductor Corporation
3,973 -

RFQ

KBP305G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 3 A 1.1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP305G C2G

KBP305G C2G

BRIDGE RECT 1PHASE 600V 3A KBP

Taiwan Semiconductor Corporation
2,739 -

RFQ

KBP305G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 3 A 1.1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP306G C2

KBP306G C2

BRIDGE RECT 1PHASE 800V 3A KBP

Taiwan Semiconductor Corporation
3,779 -

RFQ

KBP306G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1.1 V @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP306G C2G

KBP306G C2G

BRIDGE RECT 1PHASE 800V 3A KBP

Taiwan Semiconductor Corporation
2,675 -

RFQ

KBP306G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1.1 V @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP307G C2

KBP307G C2

BRIDGE RECT 1PHASE 1KV 3A KBP

Taiwan Semiconductor Corporation
2,038 -

RFQ

KBP307G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 3 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP307G C2G

KBP307G C2G

BRIDGE RECT 1PHASE 1KV 3A KBP

Taiwan Semiconductor Corporation
2,165 -

RFQ

KBP307G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 3 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBL401G T0

KBL401G T0

BRIDGE RECT 1PHASE 50V 4A KBL

Taiwan Semiconductor Corporation
2,462 -

RFQ

KBL401G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 4 A 1.1 V @ 4 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL402G T0

KBL402G T0

BRIDGE RECT 1PHASE 100V 4A KBL

Taiwan Semiconductor Corporation
2,580 -

RFQ

KBL402G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 100 V 4 A 1.1 V @ 4 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL403G T0

KBL403G T0

BRIDGE RECT 1PHASE 200V 4A KBL

Taiwan Semiconductor Corporation
3,513 -

RFQ

KBL403G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 200 V 4 A 1.1 V @ 4 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL601G T0

KBL601G T0

BRIDGE RECT 1PHASE 50V 6A KBL

Taiwan Semiconductor Corporation
3,825 -

RFQ

KBL601G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 6 A 1.1 V @ 6 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL602G T0

KBL602G T0

BRIDGE RECT 1PHASE 100V 6A KBL

Taiwan Semiconductor Corporation
2,585 -

RFQ

KBL602G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 100 V 6 A 1.1 V @ 6 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL603G T0

KBL603G T0

BRIDGE RECT 1PHASE 200V 6A KBL

Taiwan Semiconductor Corporation
3,451 -

RFQ

KBL603G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 200 V 6 A 1.1 V @ 6 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBU1001G T0

KBU1001G T0

BRIDGE RECT 1PHASE 50V 10A KBU

Taiwan Semiconductor Corporation
3,500 -

RFQ

KBU1001G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 10 A 1.1 V @ 10 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1002G T0

KBU1002G T0

BRIDGE RECT 1PHASE 100V 10A KBU

Taiwan Semiconductor Corporation
3,148 -

RFQ

KBU1002G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 100 V 10 A 1.1 V @ 10 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1003G T0

KBU1003G T0

BRIDGE RECT 1PHASE 200V 10A KBU

Taiwan Semiconductor Corporation
3,239 -

RFQ

KBU1003G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU401G T0

KBU401G T0

BRIDGE RECT 1PHASE 50V 4A KBU

Taiwan Semiconductor Corporation
2,750 -

RFQ

KBU401G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU402G T0

KBU402G T0

BRIDGE RECT 1PHASE 100V 4A KBU

Taiwan Semiconductor Corporation
2,033 -

RFQ

KBU402G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU403G T0

KBU403G T0

BRIDGE RECT 1PHASE 200V 4A KBU

Taiwan Semiconductor Corporation
3,916 -

RFQ

KBU403G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU601G T0

KBU601G T0

BRIDGE RECT 1PHASE 50V 6A KBU

Taiwan Semiconductor Corporation
3,482 -

RFQ

KBU601G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 6 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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