Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBP105G C2G

KBP105G C2G

BRIDGE RECT 1PHASE 600V 1A KBP

Taiwan Semiconductor Corporation
2,671 -

RFQ

KBP105G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 1 A 1 V @ 1 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP106G C2

KBP106G C2

BRIDGE RECT 1PHASE 800V 1A KBP

Taiwan Semiconductor Corporation
2,777 -

RFQ

KBP106G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 1 A 1 V @ 1 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP106G C2G

KBP106G C2G

BRIDGE RECT 1PHASE 800V 1A KBP

Taiwan Semiconductor Corporation
3,872 -

RFQ

KBP106G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 1 A 1 V @ 1 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP107G C2

KBP107G C2

BRIDGE RECT 1PHASE 1KV 1A KBP

Taiwan Semiconductor Corporation
3,029 -

RFQ

KBP107G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 1 A 1 V @ 1 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP107G C2G

KBP107G C2G

BRIDGE RECT 1PHASE 1KV 1A KBP

Taiwan Semiconductor Corporation
3,531 -

RFQ

KBP107G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 1 A 1 V @ 1 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP151G C2

KBP151G C2

BRIDGE RECT 1PHASE 50V 1.5A KBP

Taiwan Semiconductor Corporation
2,565 -

RFQ

KBP151G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 50 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP151G C2G

KBP151G C2G

BRIDGE RECT 1PHASE 50V 1.5A KBP

Taiwan Semiconductor Corporation
2,234 -

RFQ

KBP151G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 50 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP152G C2

KBP152G C2

BRIDGE RECT 1PHASE 100V 1.5A KBP

Taiwan Semiconductor Corporation
3,474 -

RFQ

KBP152G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP152G C2G

KBP152G C2G

BRIDGE RECT 1PHASE 100V 1.5A KBP

Taiwan Semiconductor Corporation
2,667 -

RFQ

KBP152G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP153G C2

KBP153G C2

BRIDGE RECT 1PHASE 200V 1.5A KBP

Taiwan Semiconductor Corporation
2,915 -

RFQ

KBP153G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP153G C2G

KBP153G C2G

BRIDGE RECT 1PHASE 200V 1.5A KBP

Taiwan Semiconductor Corporation
2,574 -

RFQ

KBP153G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP154G C2

KBP154G C2

BRIDGE RECT 1PHASE 400V 1.5A KBP

Taiwan Semiconductor Corporation
2,123 -

RFQ

KBP154G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP154G C2G

KBP154G C2G

BRIDGE RECT 1PHASE 400V 1.5A KBP

Taiwan Semiconductor Corporation
2,896 -

RFQ

KBP154G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP155G C2

KBP155G C2

BRIDGE RECT 1PHASE 600V 1.5A KBP

Taiwan Semiconductor Corporation
2,109 -

RFQ

KBP155G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP155G C2G

KBP155G C2G

BRIDGE RECT 1PHASE 600V 1.5A KBP

Taiwan Semiconductor Corporation
3,858 -

RFQ

KBP155G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP156G C2

KBP156G C2

BRIDGE RECT 1PHASE 800V 1.5A KBP

Taiwan Semiconductor Corporation
2,965 -

RFQ

KBP156G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP156G C2G

KBP156G C2G

BRIDGE RECT 1PHASE 800V 1.5A KBP

Taiwan Semiconductor Corporation
3,247 -

RFQ

KBP156G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP157G C2

KBP157G C2

BRIDGE RECT 1PHASE 1KV 1.5A KBP

Taiwan Semiconductor Corporation
3,343 -

RFQ

KBP157G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP157G C2G

KBP157G C2G

BRIDGE RECT 1PHASE 1KV 1.5A KBP

Taiwan Semiconductor Corporation
2,973 -

RFQ

KBP157G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP201G C2

KBP201G C2

BRIDGE RECT 1PHASE 50V 2A KBP

Taiwan Semiconductor Corporation
2,836 -

RFQ

KBP201G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 50 V 2 A 1.2 V @ 2 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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