Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBU801G T0G

KBU801G T0G

BRIDGE RECT 1PHASE 50V 8A KBU

Taiwan Semiconductor Corporation
2,772 -

RFQ

KBU801G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 50 V 8 A 1.1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU802G T0G

KBU802G T0G

BRIDGE RECT 1PHASE 100V 8A KBU

Taiwan Semiconductor Corporation
2,570 -

RFQ

KBU802G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 100 V 8 A 1.1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU803G T0G

KBU803G T0G

BRIDGE RECT 1PHASE 200V 8A KBU

Taiwan Semiconductor Corporation
2,533 -

RFQ

KBU803G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU804G T0G

KBU804G T0G

BRIDGE RECT 1PHASE 400V 8A KBU

Taiwan Semiconductor Corporation
2,956 -

RFQ

KBU804G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU805G T0G

KBU805G T0G

BRIDGE RECT 1PHASE 600V 8A KBU

Taiwan Semiconductor Corporation
3,180 -

RFQ

KBU805G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU806G T0G

KBU806G T0G

BRIDGE RECT 1PHASE 800V 8A KBU

Taiwan Semiconductor Corporation
3,032 -

RFQ

KBU806G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU807G T0G

KBU807G T0G

BRIDGE RECT 1PHASE 1KV 8A KBU

Taiwan Semiconductor Corporation
3,622 -

RFQ

KBU807G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 1 kV 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
DBL152G

DBL152G

DIODE BRIDGE 1.5A 100V DBL

Taiwan Semiconductor Corporation
3,354 -

RFQ

Tube - Active Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
TS20P02GH

TS20P02GH

DIODE BRIDGE 100V 20A TS-6P

Taiwan Semiconductor Corporation
3,133 -

RFQ

Tube Automotive, AEC-Q101 Active Single Phase Standard 100 V 20 A 1.1 V @ 20 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBU802

GBU802

DIODE BRIDGE 8A 100V GBU

Taiwan Semiconductor Corporation
3,604 -

RFQ

Tube - Active Single Phase Standard 100 V 8 A 1.1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
KBU1002G

KBU1002G

DIODE BRIDGE 10A 100V KBU

Taiwan Semiconductor Corporation
2,619 -

RFQ

Tray - Active Single Phase Standard 100 V 10 A 1.1 V @ 10 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
DBL152GH

DBL152GH

DIODE BRIDGE 1.5A 100V DBL

Taiwan Semiconductor Corporation
2,286 -

RFQ

Tube Automotive, AEC-Q101 Active Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL153G

DBL153G

DIODE BRIDGE 1.5A 200V DBL

Taiwan Semiconductor Corporation
3,570 -

RFQ

Tube - Active Single Phase Standard 200 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
KBU402G

KBU402G

DIODE BRIDGE 4A 100V KBU

Taiwan Semiconductor Corporation
2,994 -

RFQ

Tray - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
DBL151GH

DBL151GH

DIODE BRIDGE 1.5A 50V DBL

Taiwan Semiconductor Corporation
2,260 -

RFQ

Tube Automotive, AEC-Q101 Active Single Phase Standard 50 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
TS20P01GH

TS20P01GH

DIODE BRIDGE 50V 20A TS-6P

Taiwan Semiconductor Corporation
2,318 -

RFQ

Tube Automotive, AEC-Q101 Active Single Phase Standard 50 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DBL151G

DBL151G

DIODE BRIDGE 1.5A 50V DBL

Taiwan Semiconductor Corporation
2,810 -

RFQ

Tube - Active Single Phase Standard 50 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
GBU803H

GBU803H

DIODE BRIDGE 8A 200V GBU

Taiwan Semiconductor Corporation
3,098 -

RFQ

Tube Automotive, AEC-Q101 Active Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
KBU403G

KBU403G

DIODE BRIDGE 4A 200V KBU

Taiwan Semiconductor Corporation
3,057 -

RFQ

Tray - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBU802H

GBU802H

DIODE BRIDGE 8A 100V GBU

Taiwan Semiconductor Corporation
3,993 -

RFQ

Tube Automotive, AEC-Q101 Active Single Phase Standard 100 V 8 A 1.1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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