Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBP201G C2G

KBP201G C2G

BRIDGE RECT 1PHASE 50V 2A KBP

Taiwan Semiconductor Corporation
3,263 -

RFQ

KBP201G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 50 V 2 A 1.2 V @ 2 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP202G C2

KBP202G C2

BRIDGE RECT 1PHASE 100V 2A KBP

Taiwan Semiconductor Corporation
3,805 -

RFQ

KBP202G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 2 A 1.2 V @ 2 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP202G C2G

KBP202G C2G

BRIDGE RECT 1PHASE 100V 2A KBP

Taiwan Semiconductor Corporation
3,237 -

RFQ

KBP202G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 2 A 1.2 V @ 2 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP203G C2

KBP203G C2

BRIDGE RECT 1PHASE 200V 2A KBP

Taiwan Semiconductor Corporation
2,768 -

RFQ

KBP203G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 2 A 1.2 V @ 2 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP203G C2G

KBP203G C2G

BRIDGE RECT 1PHASE 200V 2A KBP

Taiwan Semiconductor Corporation
2,130 -

RFQ

KBP203G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 2 A 1.2 V @ 2 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP204G C2

KBP204G C2

BRIDGE RECT 1PHASE 400V 2A KBP

Taiwan Semiconductor Corporation
2,346 -

RFQ

KBP204G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 2 A 1.2 V @ 2 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP204G C2G

KBP204G C2G

BRIDGE RECT 1PHASE 400V 2A KBP

Taiwan Semiconductor Corporation
3,340 -

RFQ

KBP204G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 2 A 1.2 V @ 2 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP205G C2

KBP205G C2

BRIDGE RECT 1PHASE 600V 2A KBP

Taiwan Semiconductor Corporation
3,661 -

RFQ

KBP205G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 2 A 1.2 V @ 2 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP205G C2G

KBP205G C2G

BRIDGE RECT 1PHASE 600V 2A KBP

Taiwan Semiconductor Corporation
2,284 -

RFQ

KBP205G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 2 A 1.2 V @ 2 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP206G C2

KBP206G C2

BRIDGE RECT 1PHASE 800V 2A KBP

Taiwan Semiconductor Corporation
2,440 -

RFQ

KBP206G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 2 A 1.2 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP206G C2G

KBP206G C2G

BRIDGE RECT 1PHASE 800V 2A KBP

Taiwan Semiconductor Corporation
3,348 -

RFQ

KBP206G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 2 A 1.2 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP207G C2

KBP207G C2

BRIDGE RECT 1PHASE 1KV 2A KBP

Taiwan Semiconductor Corporation
3,417 -

RFQ

KBP207G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 2 A 1.2 V @ 2 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP207G C2G

KBP207G C2G

BRIDGE RECT 1PHASE 1KV 2A KBP

Taiwan Semiconductor Corporation
3,045 -

RFQ

KBP207G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 2 A 1.2 V @ 2 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP301G C2

KBP301G C2

BRIDGE RECT 1PHASE 50V 3A KBP

Taiwan Semiconductor Corporation
2,970 -

RFQ

KBP301G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 50 V 3 A 1.1 V @ 3 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP301G C2G

KBP301G C2G

BRIDGE RECT 1PHASE 50V 3A KBP

Taiwan Semiconductor Corporation
3,718 -

RFQ

KBP301G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 50 V 3 A 1.1 V @ 3 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP302G C2

KBP302G C2

BRIDGE RECT 1PHASE 100V 3A KBP

Taiwan Semiconductor Corporation
3,679 -

RFQ

KBP302G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 3 A 1.1 V @ 3 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP302G C2G

KBP302G C2G

BRIDGE RECT 1PHASE 100V 3A KBP

Taiwan Semiconductor Corporation
3,241 -

RFQ

KBP302G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 3 A 1.1 V @ 3 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP303G C2

KBP303G C2

BRIDGE RECT 1PHASE 200V 3A KBP

Taiwan Semiconductor Corporation
3,168 -

RFQ

KBP303G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1.1 V @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP303G C2G

KBP303G C2G

BRIDGE RECT 1PHASE 200V 3A KBP

Taiwan Semiconductor Corporation
2,116 -

RFQ

KBP303G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1.1 V @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP304G C2

KBP304G C2

BRIDGE RECT 1PHASE 400V 3A KBP

Taiwan Semiconductor Corporation
3,078 -

RFQ

KBP304G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 3 A 1.1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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