Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBPC3501 T0G

GBPC3501 T0G

BRIDGE RECT 1PHASE 100V 35A GBPC

Taiwan Semiconductor Corporation
2,126 -

RFQ

GBPC3501 T0G

Ficha técnica

Tray - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3501M T0G

GBPC3501M T0G

BRIDGE RECT 1P 100V 35A GBPC-M

Taiwan Semiconductor Corporation
2,656 -

RFQ

GBPC3501M T0G

Ficha técnica

Tray - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC3501W T0G

GBPC3501W T0G

BRIDGE RECT 1P 100V 35A GBPC-W

Taiwan Semiconductor Corporation
2,899 -

RFQ

GBPC3501W T0G

Ficha técnica

Tray - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3502 T0G

GBPC3502 T0G

BRIDGE RECT 1PHASE 200V 35A GBPC

Taiwan Semiconductor Corporation
2,531 -

RFQ

GBPC3502 T0G

Ficha técnica

Tray - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3502M T0G

GBPC3502M T0G

BRIDGE RECT 1P 200V 35A GBPC-M

Taiwan Semiconductor Corporation
3,955 -

RFQ

GBPC3502M T0G

Ficha técnica

Tray - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC3502W T0G

GBPC3502W T0G

BRIDGE RECT 1P 200V 35A GBPC-W

Taiwan Semiconductor Corporation
2,181 -

RFQ

GBPC3502W T0G

Ficha técnica

Tray - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3504 T0G

GBPC3504 T0G

BRIDGE RECT 1PHASE 400V 35A GBPC

Taiwan Semiconductor Corporation
3,041 -

RFQ

GBPC3504 T0G

Ficha técnica

Tray - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3504M T0G

GBPC3504M T0G

BRIDGE RECT 1P 400V 35A GBPC-M

Taiwan Semiconductor Corporation
2,661 -

RFQ

GBPC3504M T0G

Ficha técnica

Tray - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC3504W T0G

GBPC3504W T0G

BRIDGE RECT 1P 400V 35A GBPC-W

Taiwan Semiconductor Corporation
2,185 -

RFQ

GBPC3504W T0G

Ficha técnica

Tray - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3506 T0G

GBPC3506 T0G

BRIDGE RECT 1PHASE 600V 35A GBPC

Taiwan Semiconductor Corporation
2,940 -

RFQ

GBPC3506 T0G

Ficha técnica

Tray - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3506M T0G

GBPC3506M T0G

BRIDGE RECT 1P 600V 35A GBPC-M

Taiwan Semiconductor Corporation
2,145 -

RFQ

GBPC3506M T0G

Ficha técnica

Tray - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC3506W T0G

GBPC3506W T0G

BRIDGE RECT 1P 600V 35A GBPC-W

Taiwan Semiconductor Corporation
3,905 -

RFQ

GBPC3506W T0G

Ficha técnica

Tray - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3508 T0G

GBPC3508 T0G

BRIDGE RECT 1PHASE 800V 35A GBPC

Taiwan Semiconductor Corporation
3,092 -

RFQ

GBPC3508 T0G

Ficha técnica

Tray - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3508M T0G

GBPC3508M T0G

BRIDGE RECT 1P 800V 35A GBPC-M

Taiwan Semiconductor Corporation
3,742 -

RFQ

GBPC3508M T0G

Ficha técnica

Tray - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC3508W T0G

GBPC3508W T0G

BRIDGE RECT 1P 800V 35A GBPC-W

Taiwan Semiconductor Corporation
3,436 -

RFQ

GBPC3508W T0G

Ficha técnica

Tray - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3510 T0G

GBPC3510 T0G

BRIDGE RECT 1PHASE 1KV 35A GBPC

Taiwan Semiconductor Corporation
3,952 -

RFQ

GBPC3510 T0G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3510M T0G

GBPC3510M T0G

BRIDGE RECT 1P 1KV 35A GBPC-M

Taiwan Semiconductor Corporation
3,453 -

RFQ

GBPC3510M T0G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC3510W T0G

GBPC3510W T0G

BRIDGE RECT 1P 1KV 35A GBPC-W

Taiwan Semiconductor Corporation
3,410 -

RFQ

GBPC3510W T0G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC40005 T0G

GBPC40005 T0G

BRIDGE RECT 1P 50V 40A GBPC40

Taiwan Semiconductor Corporation
2,692 -

RFQ

GBPC40005 T0G

Ficha técnica

Tray - Active Single Phase Standard 50 V 40 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40
GBPC40005M T0G

GBPC40005M T0G

BRIDGE RECT 1P 50V 40A GBPC40-M

Taiwan Semiconductor Corporation
3,229 -

RFQ

GBPC40005M T0G

Ficha técnica

Tray - Active Single Phase Standard 50 V 40 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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