Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP2P08

RFP2P08

P-CHANNEL POWER MOSFET

Harris Corporation
3,542 -

RFQ

RFP2P08

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 3.5Ohm @ 1A, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP2N08

RFP2N08

N-CHANNEL, MOSFET

Harris Corporation
3,360 -

RFQ

RFP2N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP2N10

RFP2N10

N-CHANNEL, MOSFET

Harris Corporation
1,323 -

RFQ

RFP2N10

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD4N06L

RFD4N06L

N-CHANNEL POWER MOSFET

Harris Corporation
1,424 -

RFQ

RFD4N06L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 5V 600mOhm @ 1A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD8P06E

RFD8P06E

P-CHANNEL POWER MOSFET

Harris Corporation
2,278 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFP8P06LE

RFP8P06LE

P-CHANNEL POWER MOSFET

Harris Corporation
1,578 -

RFQ

RFP8P06LE

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 5V 300mOhm @ 8A, 5V 2V @ 250µA 30 nC @ 10 V ±10V 675 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD3N08L

RFD3N08L

N-CHANNEL POWER MOSFET

Harris Corporation
1,346 -

RFQ

RFD3N08L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 1.5A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF613

IRF613

N-CHANNEL POWER MOSFET

Harris Corporation
2,940 -

RFQ

IRF613

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU110

IRFU110

4.7A 100V 0.540 OHM N-CHANNEL

Harris Corporation
2,825 -

RFQ

IRFU110

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP4N06

RFP4N06

N-CHANNEL POWER MOSFET

Harris Corporation
1,079 -

RFQ

RFP4N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD3N08LSM9A

RFD3N08LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,425 -

RFQ

RFD3N08LSM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 3A, 5V 2.5V @ 250µA 8.5 nC @ 10 V ±10V 125 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFD121

IRFD121

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
1,000 -

RFQ

IRFD121

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 1.3A (Tc) 10V 300mOhm @ 600mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF523

IRF523

N-CHANNEL POWER MOSFET

Harris Corporation
2,608 -

RFQ

IRF523

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP14N06L

RFP14N06L

N-CHANNEL POWER MOSFET

Harris Corporation
1,085 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFR121

IRFR121

N-CHANNEL POWER MOSFET

Harris Corporation
2,880 -

RFQ

IRFR121

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8.4A - - - - - - - - - Surface Mount
RFD14N06LSM9A

RFD14N06LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

RFD14N06LSM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFD112

IRFD112

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
1,371 -

RFQ

IRFD112

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR1219A

IRFR1219A

N-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

IRFR1219A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR91109A

IRFR91109A

P-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

IRFR91109A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR321

IRFR321

N-CHANNEL POWER MOSFET

Harris Corporation
1,802 -

RFQ

IRFR321

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 3.1A (Ta) 10V 1.8Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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