Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
C3M0120065D

C3M0120065D

650V 120M SIC MOSFET

Wolfspeed, Inc.
2,972 -

RFQ

C3M0120065D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 22A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 28 nC @ 15 V +19V, -8V 640 pF @ 400 V - 98W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0065090J-TR

C3M0065090J-TR

SICFET N-CH 900V 35A D2PAK-7

Wolfspeed, Inc.
2,240 -

RFQ

C3M0065090J-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 35A (Tc) 15V 78mOhm @ 20A, 15V 2.1V @ 5mA 30 nC @ 15 V +19V, -8V 660 pF @ 600 V - 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0075120K

C3M0075120K

SICFET N-CH 1200V 30A TO247-4L

Wolfspeed, Inc.
2,058 -

RFQ

C3M0075120K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 51 nC @ 15 V +19V, -8V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M0080120D

C2M0080120D

SICFET N-CH 1200V 36A TO247-3

Wolfspeed, Inc.
809 -

RFQ

C2M0080120D

Ficha técnica

Bulk C2M™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 98mOhm @ 20A, 20V 4V @ 5mA 62 nC @ 5 V +25V, -10V 950 pF @ 1000 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0032120K

C3M0032120K

SICFET N-CH 1200V 63A TO247-4L

Wolfspeed, Inc.
3,408 -

RFQ

C3M0032120K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 118 nC @ 15 V +15V, -4V 3357 pF @ 1000 V - 283W (Tc) -40°C ~ 175°C (TJ) Through Hole
C2M0045170D

C2M0045170D

SICFET N-CH 1700V 72A TO247-3

Wolfspeed, Inc.
3,387 -

RFQ

C2M0045170D

Ficha técnica

Tube C2M™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1700 V 72A (Tc) 20V 70mOhm @ 50A, 20V 4V @ 18mA 188 nC @ 20 V +25V, -10V 3672 pF @ 1000 V - 520W (Tc) -40°C ~ 150°C (TJ) Through Hole
C3M0160120D

C3M0160120D

SICFET N-CH 1200V 17A TO247-3

Wolfspeed, Inc.
3,892 -

RFQ

C3M0160120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 15V 208mOhm @ 8.5A, 15V 3.6V @ 2.33mA 38 nC @ 15 V +15V, -4V 632 pF @ 1000 V - 97W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0040120J1

C3M0040120J1

1200V 40 M SIC MOSFET

Wolfspeed, Inc.
901 -

RFQ

C3M0040120J1

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA 94 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 272W (Tc) -40°C ~ 150°C (TJ) Surface Mount
C3M0120100J

C3M0120100J

SICFET N-CH 1000V 22A D2PAK-7

Wolfspeed, Inc.
3,573 -

RFQ

C3M0120100J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 21.5 nC @ 15 V +15V, -4V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0065090D

C3M0065090D

SICFET N-CH 900V 36A TO247-3

Wolfspeed, Inc.
2,498 -

RFQ

C3M0065090D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 36A (Tc) 15V 78mOhm @ 20A, 15V 2.1V @ 5mA 30.4 nC @ 15 V +18V, -8V 660 pF @ 600 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0280090J-TR

C3M0280090J-TR

SICFET N-CH 900V 11A D2PAK-7

Wolfspeed, Inc.
3,231 -

RFQ

C3M0280090J-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 11A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0280090D

C3M0280090D

SICFET N-CH 900V 11.5A TO247-3

Wolfspeed, Inc.
3,800 -

RFQ

C3M0280090D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 11.5A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0350120D

C3M0350120D

SICFET N-CH 1200V 7.6A TO247-3

Wolfspeed, Inc.
3,704 -

RFQ

C3M0350120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.6A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 19 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0120090J-TR

C3M0120090J-TR

SICFET N-CH 900V 22A D2PAK-7

Wolfspeed, Inc.
2,339 -

RFQ

C3M0120090J-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C2M0280120D

C2M0280120D

SICFET N-CH 1200V 10A TO247-3

Wolfspeed, Inc.
42,695 -

RFQ

C2M0280120D

Ficha técnica

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 20V 370mOhm @ 6A, 20V 2.8V @ 1.25mA (Typ) 20.4 nC @ 20 V +25V, -10V 259 pF @ 1000 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M1000170D

C2M1000170D

SICFET N-CH 1700V 4.9A TO247-3

Wolfspeed, Inc.
3,163 -

RFQ

C2M1000170D

Ficha técnica

Tube Z-FET™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 4.9A (Tc) 20V 1.1Ohm @ 2A, 20V 2.4V @ 100µA 13 nC @ 20 V +25V, -10V 191 pF @ 1000 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M1000170J

C2M1000170J

SICFET N-CH 1700V 5.3A D2PAK

Wolfspeed, Inc.
2,792 -

RFQ

C2M1000170J

Ficha técnica

Bulk C2M™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.3A (Tc) 20V 1.4Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13 nC @ 20 V +25V, -10V 200 pF @ 1000 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0120090J

C3M0120090J

SICFET N-CH 900V 22A D2PAK-7

Wolfspeed, Inc.
7,112 -

RFQ

C3M0120090J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0120100K

C3M0120100K

SICFET N-CH 1000V 22A TO247-4L

Wolfspeed, Inc.
2,957 -

RFQ

C3M0120100K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 21.5 nC @ 15 V ±15V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0060065J

C3M0060065J

SICFET N-CH 650V 36A TO263-7

Wolfspeed, Inc.
1,664 -

RFQ

C3M0060065J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 36A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 136W (Tc) -40°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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