Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
C3M0075120K-A

C3M0075120K-A

75M 1200V 175C SIC FET

Wolfspeed, Inc.
2,402 -

RFQ

C3M0075120K-A

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 90mOhm @ 20A, 15V 3.6V @ 5mA 53 nC @ 15 V +15V, -4V 1390 pF @ 1000 V - 136W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0025065J1

C3M0025065J1

650V 25 M SIC MOSFET

Wolfspeed, Inc.
2,745 -

RFQ

C3M0025065J1

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 80A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 109 nC @ 15 V +19V, -8V 2980 pF @ 400 V - 271W (Tc) -40°C ~ 150°C (TJ) Surface Mount
C3M0032120J1

C3M0032120J1

1200V 32MOHM SIC MOSFET

Wolfspeed, Inc.
3,424 -

RFQ

C3M0032120J1

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 41.4A, 15V 3.6V @ 11.5mA 111 nC @ 15 V +15V, -4V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 150°C (TJ) Surface Mount
CMF20120D

CMF20120D

SICFET N-CH 1200V 42A TO247-3

Wolfspeed, Inc.
3,632 -

RFQ

CMF20120D

Ficha técnica

Tube Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 42A (Tc) 20V 110mOhm @ 20A, 20V 4V @ 1mA 90.8 nC @ 20 V +25V, -5V 1915 pF @ 800 V - 215W (Tc) -55°C ~ 135°C (TJ) Through Hole
CMF10120D

CMF10120D

SICFET N-CH 1200V 24A TO247

Wolfspeed, Inc.
2,569 -

RFQ

CMF10120D

Ficha técnica

Tube Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 20V 220mOhm @ 10A, 20V 4V @ 500µA 47.1 nC @ 20 V +25V, -5V 928 pF @ 800 V - 134W (Tc) -55°C ~ 135°C (TJ) Through Hole
E3M0280090D

E3M0280090D

SICFET N-CH 900V 11.5A TO247-3

Wolfspeed, Inc.
528 -

RFQ

E3M0280090D

Ficha técnica

Tube E-Series, Automotive Obsolete N-Channel SiCFET (Silicon Carbide) 900 V 11.5A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
E3M0120090D

E3M0120090D

SICFET N-CH 900V 23A TO247-3

Wolfspeed, Inc.
411 -

RFQ

E3M0120090D

Ficha técnica

Tube E-Series, Automotive Obsolete N-Channel SiCFET (Silicon Carbide) 900 V 23A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 97W (Tc) -55°C ~ 150°C (TJ) Through Hole
CPM2-1200-0080B

CPM2-1200-0080B

MOSFET NCH 1200V 36A DIE

Wolfspeed, Inc.
3,000 -

RFQ

CPM2-1200-0080B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPM2-1200-0160B

CPM2-1200-0160B

MOSFET NCH 1200V 36A DIE

Wolfspeed, Inc.
2,393 -

RFQ

CPM2-1200-0160B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPMF-1200-S080B

CPMF-1200-S080B

SICFET N-CH 1200V 50A DIE

Wolfspeed, Inc.
2,965 -

RFQ

CPMF-1200-S080B

Ficha técnica

Bulk Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 50A (Tj) 20V 110mOhm @ 20A, 20V 4V @ 1mA 90.8 nC @ 20 V +25V, -5V 1915 pF @ 800 V - 313mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
CPMF-1200-S160B

CPMF-1200-S160B

SICFET N-CH 1200V 28A DIE

Wolfspeed, Inc.
3,649 -

RFQ

CPMF-1200-S160B

Ficha técnica

Bulk Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 28A (Tj) 20V 220mOhm @ 10A, 20V 4V @ 1mA 47.1 nC @ 20 V +25V, -5V 928 pF @ 800 V - 202W (Tj) -55°C ~ 150°C (TJ) Surface Mount
C2M0080170P

C2M0080170P

SICFET N-CH 1700V 40A TO247-4

Wolfspeed, Inc.
3,349 -

RFQ

C2M0080170P

Ficha técnica

Tube C2M™ Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 40A (Tc) 20V 125mOhm @ 28A, 20V 4V @ 10mA 120 nC @ 20 V +25V, -10V 2250 pF @ 1000 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
E3M0065090D

E3M0065090D

SICFET N-CH 900V 35A TO247-3

Wolfspeed, Inc.
3,796 -

RFQ

E3M0065090D

Ficha técnica

Tube E-Series, Automotive Obsolete N-Channel SiCFET (Silicon Carbide) 900 V 35A (Tc) 15V 84.5mOhm @ 20A, 15V 3.5V @ 5mA 30.4 nC @ 15 V +18V, -8V 660 pF @ 600 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
X3M0120065L

X3M0120065L

650V MOSFET

Wolfspeed, Inc.
2,055 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
C3M0075120J-TR

C3M0075120J-TR

SICFET N-CH 1200V 30A TO263-7

Wolfspeed, Inc.
2,165 -

RFQ

C3M0075120J-TR

Ficha técnica

Tape & Reel (TR) C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 51 nC @ 15 V +15V, -4V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PC3M0060065L

PC3M0060065L

650V MOSFET

Wolfspeed, Inc.
2,728 -

RFQ

Tape & Reel (TR) - Active - SiCFET (Silicon Carbide) 650 V 38A - - - - - - - 126W 150°C (TJ) -
C3M0065100J-TR

C3M0065100J-TR

SICFET N-CH 1000V 35A TO263-7

Wolfspeed, Inc.
3,530 -

RFQ

C3M0065100J-TR

Ficha técnica

Tape & Reel (TR) C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +15V, -4V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PC3M0045065L

PC3M0045065L

650V MOSFET

Wolfspeed, Inc.
2,513 -

RFQ

Tape & Reel (TR) - Active - SiCFET (Silicon Carbide) 650 V 51A - - - - - - - 160W 150°C (TJ) -
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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