Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
C3M0120065K

C3M0120065K

650V 120M SIC MOSFET

Wolfspeed, Inc.
667 -

RFQ

C3M0120065K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 22A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 28 nC @ 15 V +19V, -8V 640 pF @ 400 V - 98W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0160120J

C3M0160120J

SICFET N-CH 1200V 17A TO263-7

Wolfspeed, Inc.
4,286 -

RFQ

C3M0160120J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 15V 208mOhm @ 8.5A, 15V 3.6V @ 2.33mA 24 nC @ 15 V +15V, -4V 632 pF @ 1000 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0045065D

C3M0045065D

GEN 3 650V 45 M SIC MOSFET

Wolfspeed, Inc.
450 -

RFQ

C3M0045065D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 63 nC @ 15 V +19V, -8V 1621 pF @ 600 V - 176W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0045065K

C3M0045065K

GEN 3 650V 49A SIC MOSFET

Wolfspeed, Inc.
1,128 -

RFQ

C3M0045065K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 63 nC @ 15 V +19V, -8V 1621 pF @ 600 V - 176W (Tc) -40°C ~ 175°C (TJ) Through Hole
E3M0075120D

E3M0075120D

1200V AUTOMOTIVE SIC 75MOHM FET

Wolfspeed, Inc.
243 -

RFQ

E3M0075120D

Ficha técnica

Tube E-Series, Automotive Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 97.5mOhm @ 17.9A, 15V 3.6V @ 5mA 57 nC @ 15 V +19V, -8V 1480 pF @ 1000 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0040120K

C3M0040120K

1200V 40MOHM SIC MOSFET

Wolfspeed, Inc.
2,006 -

RFQ

C3M0040120K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA 99 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0016120D

C3M0016120D

SICFET N-CH 1200V 115A TO247-3

Wolfspeed, Inc.
1,361 -

RFQ

C3M0016120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 115A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA 207 nC @ 15 V +15V, -4V 6085 pF @ 1000 V - 556W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0350120J

C3M0350120J

SICFET N-CH 1200V 7.2A TO263-7

Wolfspeed, Inc.
8,669 -

RFQ

C3M0350120J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.2A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 13 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 40.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0120090D

C3M0120090D

SICFET N-CH 900V 23A TO247-3

Wolfspeed, Inc.
3,492 -

RFQ

C3M0120090D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 23A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 414 pF @ 600 V - 97W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M0160120D

C2M0160120D

SICFET N-CH 1200V 19A TO247-3

Wolfspeed, Inc.
500 -

RFQ

C2M0160120D

Ficha técnica

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 20V 196mOhm @ 10A, 20V 2.5V @ 500µA 32.6 nC @ 20 V +25V, -10V 527 pF @ 800 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0120065J

C3M0120065J

650V 120M SIC MOSFET

Wolfspeed, Inc.
982 -

RFQ

C3M0120065J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 26 nC @ 15 V +19V, -8V 640 pF @ 400 V - 86W (Tc) -40°C ~ 175°C (TJ) Surface Mount
E3M0120090J

E3M0120090J

900V 120M AUTOMOTIVE SIC MOSFET

Wolfspeed, Inc.
1,299 -

RFQ

E3M0120090J

Ficha técnica

Tube E-Series, Automotive Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 18 nC @ 15 V +15V, -4V 414 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
E3M0060065D

E3M0060065D

60M 650V SIC AUTOMOTIVE MOSFET

Wolfspeed, Inc.
410 -

RFQ

E3M0060065D

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 3.6mA 46 nC @ 15 V +19V, -8V 1170 pF @ 600 V - 131W (Tc) -40°C ~ 175°C (TJ) Through Hole
E3M0060065K

E3M0060065K

60M 650V SIC AUTOMOTIVE MOSFET

Wolfspeed, Inc.
450 -

RFQ

E3M0060065K

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 3.6mA 49 nC @ 15 V +19V, -8V 1170 pF @ 600 V - 131W (Tc) -40°C ~ 175°C (TJ) Through Hole
E3M0075120K

E3M0075120K

1200V AUTOMOTIVE SIC 75MOHM FET

Wolfspeed, Inc.
370 -

RFQ

E3M0075120K

Ficha técnica

Tube E-Series, Automotive Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 97.5mOhm @ 17.9A, 15V 3.6V @ 5mA 55 nC @ 15 V +19V, -8V 1480 pF @ 1000 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0032120D

C3M0032120D

SICFET N-CH 1200V 63A TO247-3

Wolfspeed, Inc.
416 -

RFQ

C3M0032120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 114 nC @ 15 V +15V, -4V 3357 pF @ 1000 V - 283W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0045065J1

C3M0045065J1

650V 45 M SIC MOSFET

Wolfspeed, Inc.
1,000 -

RFQ

C3M0045065J1

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 61 nC @ 15 V +19V, -8V 1621 pF @ 400 V - 147W (Tc) -40°C ~ 150°C (TJ) Surface Mount
C3M0060065K

C3M0060065K

SICFET N-CH 650V 37A TO247-4L

Wolfspeed, Inc.
3,292 -

RFQ

C3M0060065K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 150W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0040120J1-TR

C3M0040120J1-TR

1200V 40 M SIC MOSFET

Wolfspeed, Inc.
3,508 -

RFQ

C3M0040120J1-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA 94 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 272W (Tc) -40°C ~ 150°C (TJ) Surface Mount
C3M0075120D-A

C3M0075120D-A

75M 1200V 175C SIC FET

Wolfspeed, Inc.
2,708 -

RFQ

C3M0075120D-A

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 90mOhm @ 20A, 15V 3.6V @ 5mA 54 nC @ 15 V +15V, -4V 1390 pF @ 1000 V - 136W (Tc) -40°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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