Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
C3M0060065D

C3M0060065D

SICFET N-CH 650V 37A TO247-3

Wolfspeed, Inc.
431 -

RFQ

C3M0060065D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 150W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0065090J

C3M0065090J

SICFET N-CH 900V 35A D2PAK-7

Wolfspeed, Inc.
8,178 -

RFQ

C3M0065090J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 35A (Tc) 15V 78mOhm @ 20A, 15V 2.1V @ 5mA 30 nC @ 15 V +19V, -8V 660 pF @ 600 V - 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0075120J

C3M0075120J

SICFET N-CH 1200V 30A D2PAK-7

Wolfspeed, Inc.
3,648 -

RFQ

C3M0075120J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 51 nC @ 15 V +19V, -8V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0075120D

C3M0075120D

SICFET N-CH 1200V 30A TO247-3

Wolfspeed, Inc.
274 -

RFQ

C3M0075120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 54 nC @ 15 V +19V, -8V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0065100J

C3M0065100J

SICFET N-CH 1000V 35A D2PAK-7

Wolfspeed, Inc.
4,452 -

RFQ

C3M0065100J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +15V, -4V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0065100K

C3M0065100K

SICFET N-CH 1000V 35A TO247-4L

Wolfspeed, Inc.
2,020 -

RFQ

C3M0065100K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +19V, -8V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0040120D

C3M0040120D

1200V 40MOHM SIC MOSFET

Wolfspeed, Inc.
597 -

RFQ

C3M0040120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.5mA 101 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0025065K

C3M0025065K

GEN 3 650V 25 M SIC MOSFET

Wolfspeed, Inc.
930 -

RFQ

C3M0025065K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 97A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 112 nC @ 15 V +19V, -8V 2980 pF @ 600 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0025065D

C3M0025065D

GEN 3 650V 25 M SIC MOSFET

Wolfspeed, Inc.
782 -

RFQ

C3M0025065D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 97A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 108 nC @ 15 V +19V, -8V 2980 pF @ 600 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0021120K

C3M0021120K

SICFET N-CH 1200V 100A TO247-4L

Wolfspeed, Inc.
5,065 -

RFQ

C3M0021120K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 162 nC @ 15 V +15V, -4V 4818 pF @ 1000 V - 469W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0021120D

C3M0021120D

SICFET N-CH 1200V 100A TO247-3

Wolfspeed, Inc.
2,372 -

RFQ

C3M0021120D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 160 nC @ 15 V +15V, -4V 4818 pF @ 1000 V - 469W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0030090K

C3M0030090K

SICFET N-CH 900V 63A TO247-4

Wolfspeed, Inc.
4,934 -

RFQ

C3M0030090K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 63A (Tc) 15V 39mOhm @ 35A, 15V 3.5V @ 11mA 87 nC @ 15 V +15V, -4V 1864 pF @ 600 V - 149W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M0040120D

C2M0040120D

SICFET N-CH 1200V 60A TO247-3

Wolfspeed, Inc.
2,114 -

RFQ

C2M0040120D

Ficha técnica

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 52mOhm @ 40A, 20V 2.8V @ 10mA 115 nC @ 20 V +25V, -10V 1893 pF @ 1000 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0015065D

C3M0015065D

SICFET N-CH 650V 120A TO247-3

Wolfspeed, Inc.
820 -

RFQ

C3M0015065D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 120A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA 188 nC @ 15 V +15V, -4V 5011 pF @ 400 V - 416W (Tc) -40°C ~ 175°C (TJ) Through Hole
C2M0025120D

C2M0025120D

SICFET N-CH 1200V 90A TO247-3

Wolfspeed, Inc.
7,165 -

RFQ

C2M0025120D

Ficha técnica

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 20V 34mOhm @ 50A, 20V 2.4V @ 10mA 161 nC @ 20 V +25V, -10V 2788 pF @ 1000 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0016120K

C3M0016120K

SICFET N-CH 1.2KV 115A TO247-4

Wolfspeed, Inc.
584 -

RFQ

C3M0016120K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 115A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA 211 nC @ 15 V +15V, -4V 6085 pF @ 1000 V - 556W (Tc) -40°C ~ 175°C (TJ) Through Hole
C2M0045170P

C2M0045170P

SICFET N-CH 1700V 72A TO247-4

Wolfspeed, Inc.
2,435 -

RFQ

C2M0045170P

Ficha técnica

Tube C2M™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1700 V 72A (Tc) 20V 59mOhm @ 50A, 20V 4V @ 18mA 188 nC @ 20 V +25V, -10V 3672 pF @ 1000 V - 520W (Tc) -40°C ~ 150°C (TJ) Through Hole
C3M0015065K

C3M0015065K

SICFET N-CH 650V 120A TO247-4L

Wolfspeed, Inc.
1,036 -

RFQ

C3M0015065K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 120A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA 188 nC @ 15 V +15V, -4V 5011 pF @ 400 V - 416W (Tc) -40°C ~ 175°C (TJ) Through Hole
C2M1000170J-TR

C2M1000170J-TR

SICFET N-CH 1700V 5.3A D2PAK-7

Wolfspeed, Inc.
4,800 -

RFQ

C2M1000170J-TR

Ficha técnica

Tape & Reel (TR) C2M™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.3A (Tc) 20V 1.4Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13 nC @ 20 V +25V, -10V 200 pF @ 1000 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0280090J

C3M0280090J

SICFET N-CH 900V 11A D2PAK-7

Wolfspeed, Inc.
5,894 -

RFQ

C3M0280090J

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 11A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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