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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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03N06N60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor |
3,561 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A | - | 100mOhm @ 2A, 10V | 1.2V @ 250µA | 14.6 nC @ 30 V | ±20V | 510 pF @ 30 V | - | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount |
|
5P40P40V,RD(MAX)<85M@-10V,RD(MAX)<12 Goford Semiconductor |
2,209 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 5.3A (Ta) | 4.5V, 10V | 85mOhm @ 5A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±20V | 650 pF @ 20 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G30N02TN20V,RD(MAX)<[email protected],VTH0.5V~1. Goford Semiconductor |
2,159 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Ta) | 4.5V | 13mOhm @ 20A, 4.5V | 1.2V @ 250µA | 15 nC @ 10 V | ±12V | 900 pF @ 10 V | - | 40W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
GT100N12MN120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
800 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 10V | 10mOhm @ 35A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 3050 pF @ 60 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
GC11N65MN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
790 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 768 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
GT105N10TN100V,RD(MAX)<10.5M@10V,RD(MAX)< Goford Semiconductor |
250 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
G60N10TN100V,RD(MAX)<25M@10V,RD(MAX)<30 Goford Semiconductor |
215 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 25mOhm @ 20A, 10V | 2.5V @ 250µA | 146 nC @ 10 V | ±20V | 3970 pF @ 50 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
GC11N65TN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
2,557 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
GT100N12TN120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
3,432 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 10V | 10mOhm @ 35A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 3050 pF @ 60 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
GT52N10TN100V,RD(MAX)<9M@10V,RD(MAX)<15M Goford Semiconductor |
3,988 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A | - | 9mOhm @ 50A, 10V | 2.5V @ 250µA | 44.5 nC @ 10 V | ±20V | 2626 pF @ 50 V | - | 227W | -55°C ~ 150°C (TJ) | Through Hole |
|
GC11N65FN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
3,284 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A | - | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 31.3W | -55°C ~ 150°C (TJ) | Through Hole |
|
|
GT035N06TN-CH, 60V,170A, RD(MAX)<3.5M@10V Goford Semiconductor |
187 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 5064 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
|
GC20N65FN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
2,197 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
GC20N65TN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
100 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
GC20N65QN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
2,171 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
2301P20V,RD(MAX)<[email protected],RD(MAX)<8 Goford Semiconductor |
8,624 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 56mOhm @ 1.7A, 4.5V | 900mV @ 250µA | 12 nC @ 2.5 V | ±10V | 405 pF @ 10 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
3401MOSFET P-CH 30V 4.2A SOT-23 Goford Semiconductor |
10,885 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.2A (Ta) | 4.5V, 10V | 55mOhm @ 4.2A, 10V | 1.3V @ 250µA | 9.5 nC @ 4.5 V | ±12V | 950 pF @ 15 V | Standard | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G3035P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Goford Semiconductor |
2,134 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Tc) | 4.5V, 10V | 59mOhm @ 4A, 10V | 2V @ 250µA | 13 nC @ 10 V | ±20V | 650 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
G3404BN30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor |
2,347 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A | - | 22mOhm @ 4.2A, 10V | 2V @ 250µA | 12.2 nC @ 10 V | ±20V | 526 pF @ 15 V | - | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
1002N100V,RD(MAX)<250M@10V,RD(MAX)<2 Goford Semiconductor |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2A | - | 250mOhm @ 2A, 10V | 3V @ 250µA | 10 nC @ 10 V | ±20V | 387 pF @ 10 V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
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