Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP17N80AE-GE3

SIHP17N80AE-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix
980 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP18N50C-E3

SIHP18N50C-E3

MOSFET N-CH 500V 18A TO220AB

Vishay Siliconix
998 -

RFQ

SIHP18N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 270mOhm @ 10A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 2942 pF @ 25 V - 223W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBE20GPBF

IRFIBE20GPBF

MOSFET N-CH 800V 1.4A TO220-3

Vishay Siliconix
2,713 -

RFQ

IRFIBE20GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.4A (Tc) 10V 6.5Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP240N60E-GE3

SIHP240N60E-GE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
461 -

RFQ

SIHP240N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 795 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB35N60EF-GE3

SIHB35N60EF-GE3

MOSFET N-CH 600V 32A D2PAK

Vishay Siliconix
2,494 -

RFQ

SIHB35N60EF-GE3

Ficha técnica

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF9Z24STRR-GE3

SIHF9Z24STRR-GE3

MOSFET P-CHANNEL 60V

Vishay Siliconix
800 -

RFQ

SIHF9Z24STRR-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA6N65E-GE3

SIHA6N65E-GE3

N-CHANNEL 650V

Vishay Siliconix
1,000 -

RFQ

SIHA6N65E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1640 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830BPBF-BE3

IRF830BPBF-BE3

MOSFET N-CH 500V 5.3A TO220AB

Vishay Siliconix
843 -

RFQ

IRF830BPBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) - 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP6N40D-BE3

SIHP6N40D-BE3

N-CHANNEL 400V

Vishay Siliconix
1,000 -

RFQ

SIHP6N40D-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA14N60E-GE3

SIHA14N60E-GE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHA14N60E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF720PBF-BE3

IRF720PBF-BE3

MOSFET N-CH 400V 3.3A TO220AB

Vishay Siliconix
868 -

RFQ

IRF720PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) - 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z14PBF-BE3

IRF9Z14PBF-BE3

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
445 -

RFQ

IRF9Z14PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL510PBF-BE3

IRL510PBF-BE3

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
398 -

RFQ

IRL510PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP5N80AE-GE3

SIHP5N80AE-GE3

E SERIES POWER MOSFET TO-220AB

Vishay Siliconix
1,000 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ)
IRFBE20PBF-BE3

IRFBE20PBF-BE3

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix
985 -

RFQ

IRFBE20PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) - 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB5N80AE-GE3

SIHB5N80AE-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix
890 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z10PBF-BE3

IRF9Z10PBF-BE3

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
862 -

RFQ

IRF9Z10PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9630PBF-BE3

IRF9630PBF-BE3

MOSFET P-CH 200V 6.5A TO220AB

Vishay Siliconix
940 -

RFQ

IRF9630PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) - 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ24PBF-BE3

IRFZ24PBF-BE3

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
208 -

RFQ

IRFZ24PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) - 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9610PBF-BE3

IRF9610PBF-BE3

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix
892 -

RFQ

IRF9610PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) - 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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