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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1SS352,H3F DIODE GEN PURP 80V 100MA SC76-2 Toshiba Semiconductor and Storage	56,413	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	3pF @ 0V, 1MHz	4 ns	500 nA @ 80 V	80 V	100mA	125°C (Max)	1.2 V @ 100 mA
TBAT54,LM DIODE SCHOTTKY 30V 140MA SOT23 Toshiba Semiconductor and Storage	471	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	-	1.5 ns	2 µA @ 25 V	30 V	140mA	150°C (Max)	580 mV @ 100 mA
1SS367,H3F DIODE SCHOTTKY 10V 100MA SC76 Toshiba Semiconductor and Storage	21,446	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	40pF @ 0V, 1MHz	-	20 µA @ 10 V	10 V	100mA	125°C (Max)	500 mV @ 100 mA
1SS385,LF(CT SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	6,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	20pF @ 0V, 1MHz	-	20 µA @ 10 V	10 V	100mA	125°C (Max)	500 mV @ 100 mA
CRS08(TE85L,Q,M) DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage	171	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	90pF @ 10V, 1MHz	-	1 mA @ 30 V	30 V	1.5A	-40°C ~ 125°C	360 mV @ 1.5 A
CMF04(TE12L,Q,M) DIODE GEN PURP 800V 500MA MFLAT Toshiba Semiconductor and Storage	302	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 800 V	800 V	500mA	-40°C ~ 150°C	2.5 V @ 500 mA
CUS10F30,H3F DIODE SCHOTTKY 30V 1A USC Toshiba Semiconductor and Storage	3,412	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	170pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	1A	125°C (Max)	500 mV @ 1 A
1SS403,H3F DIODE GEN PURP 200V 100MA USC Toshiba Semiconductor and Storage	2,235	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	3pF @ 0V, 1MHz	60 ns	1 µA @ 200 V	200 V	100mA	125°C (Max)	1.2 V @ 100 mA
1SS307(TE85L,F) DIODE GEN PURP 30V 100MA SMINI Toshiba Semiconductor and Storage	3,369	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	6pF @ 0V, 1MHz	-	10 µA @ 30 V	30 V	100mA	125°C (Max)	1.3 V @ 100 mA
1SS397TE85LF DIODE GEN PURP 400V 100MA SC70 Toshiba Semiconductor and Storage	3,408	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	500 ns	1 µA @ 400 V	400 V	100mA	125°C (Max)	1.3 V @ 100 mA
CUS05F40,H3F DIODE SCHOTTKY 40V 500MA USC Toshiba Semiconductor and Storage	2,806	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	28pF @ 0V, 1MHz	-	15 µA @ 40 V	40 V	500mA	150°C (Max)	810 mV @ 500 mA
CRG04(TE85L,Q,M) DIODE GEN PURP 600V 1A SFLAT Toshiba Semiconductor and Storage	3,469	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Last Time Buy	Surface Mount	-	-	10 µA @ 600 V	600 V	1A	-40°C ~ 150°C	1.1 V @ 1 A
CRS20I30A(TE85L,QM DIODE SCHOTTKY 30V 2A SFLAT Toshiba Semiconductor and Storage	2,762	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	50pF @ 10V, 1MHz	-	60 µA @ 30 V	30 V	2A	150°C (Max)	490 mV @ 2 A
BAS316,H3F DIODE GEN PURP 100V 250MA USC Toshiba Semiconductor and Storage	3,622	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	0.35pF @ 0V, 1MHz	3 ns	200 nA @ 80 V	100 V	250mA	150°C (Max)	1.25 V @ 150 mA
BAS516,H3F DIODE GEN PURP 100V 250MA ESC Toshiba Semiconductor and Storage	3,504	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	0.35pF @ 0V, 1MHz	3 ns	200 nA @ 80 V	100 V	250mA	150°C (Max)	1.25 V @ 150 mA
CRS14(TE85L,Q,M) DIODE SCHOTTKY 30V 2A S-FLAT Toshiba Semiconductor and Storage	2,609	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	90pF @ 10V, 1MHz	-	50 µA @ 30 V	30 V	2A	-40°C ~ 150°C	490 mV @ 2 A
CRS15(TE85L,Q,M) DIODE SCHOTTKY 30V 3A S-FLAT Toshiba Semiconductor and Storage	2,160	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	90pF @ 10V, 1MHz	-	50 µA @ 30 V	30 V	3A (DC)	-40°C ~ 150°C	520 mV @ 3 A
CUS521,H3F DIODE SCHOTTKY 30V 200MA USC Toshiba Semiconductor and Storage	2,382	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	26pF @ 0V, 1MHz	-	30 µA @ 30 V	30 V	200mA	125°C (Max)	500 mV @ 200 mA
1SS294,LF DIODE SCHOTTKY 40V 100MA SMINI Toshiba Semiconductor and Storage	3,465	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	25pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	100mA	125°C (Max)	600 mV @ 100 mA
CUS10F40,H3F DIODE SCHOTTKY 40V 1A USC Toshiba Semiconductor and Storage	3,762	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	74pF @ 0V, 1MHz	-	20 µA @ 40 V	40 V	1A	150°C (Max)	670 mV @ 1 A