Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
GC05MPS12-252

GC05MPS12-252

SIC DIODE 1200V 5A TO-252-2

GeneSiC Semiconductor
3,199 -

RFQ

GC05MPS12-252

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 359pF @ 1V, 1MHz 0 ns 4 µA @ 1200 V 1200 V 27A (DC) -55°C ~ 175°C 1.8 V @ 5 A
GD30MPS12J

GD30MPS12J

1200V 30A TO-263-7 SIC SCHOTTKY

GeneSiC Semiconductor
928 -

RFQ

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 1200 V 30A (DC) 175°C -
GD50MPS12H

GD50MPS12H

1200V 50A TO-247-2 SIC SCHOTTKY

GeneSiC Semiconductor
491 -

RFQ

GD50MPS12H

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1.835nF @ 1V, 1MHz 0 ns 15 µA @ 1200 V 1200 V 92A (DC) -55°C ~ 175°C 1.8 V @ 50 A
GD60MPS17H

GD60MPS17H

DIODE SCHOTTKY 1700V 60A TO-247-

GeneSiC Semiconductor
484 -

RFQ

GD60MPS17H

Ficha técnica

Tube SiC Schottky MPS™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Through Hole 4577pF @ 1V, 1MHz - 40 µA @ 1700 V 1700 V 122A (DC) -55°C ~ 175°C 1.8 V @ 60 A
GC02MPS12-220

GC02MPS12-220

SIC DIODE 1200V 2A TO-220-2

GeneSiC Semiconductor
137 -

RFQ

GC02MPS12-220

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 127pF @ 1V, 1MHz 0 ns 2 µA @ 1200 V 1200 V 12A (DC) -55°C ~ 175°C 1.8 V @ 2 A
S85BR

S85BR

DIODE GEN PURP REV 100V 85A DO5

GeneSiC Semiconductor
200 -

RFQ

S85BR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 100 V 85A -65°C ~ 180°C 1.1 V @ 85 A
MUR5010R

MUR5010R

DIODE GEN PURP REV 100V 50A DO5

GeneSiC Semiconductor
195 -

RFQ

MUR5010R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 75 ns 10 µA @ 50 V 100 V 50A -55°C ~ 150°C 1 V @ 50 A
GB50MPS17-247

GB50MPS17-247

SIC DIODE 1700V 50A TO-247-2

GeneSiC Semiconductor
555 -

RFQ

GB50MPS17-247

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Through Hole 3193pF @ 1V, 1MHz 0 ns 60 µA @ 1700 V 1700 V 216A (DC) -55°C ~ 175°C 1.8 V @ 50 A
GB01SLT12-214

GB01SLT12-214

DIODE SCHOTTKY 1.2KV 2.5A SMB

GeneSiC Semiconductor
3,920 -

RFQ

GB01SLT12-214

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 69pF @ 1V, 1MHz 0 ns 10 µA @ 1200 V 1200 V 2.5A -55°C ~ 175°C 1.8 V @ 1 A
GC08MPS12-220

GC08MPS12-220

SIC DIODE 1200V 8A TO-220-2

GeneSiC Semiconductor
3,155 -

RFQ

GC08MPS12-220

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 545pF @ 1V, 1MHz 0 ns 7 µA @ 1200 V 1200 V 43A (DC) -55°C ~ 175°C 1.8 V @ 8 A
S6B

S6B

DIODE GEN PURP 100V 6A DO4

GeneSiC Semiconductor
3,228 -

RFQ

S6B

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 100 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6BR

S6BR

DIODE GEN PURP REV 100V 6A DO4

GeneSiC Semiconductor
2,190 -

RFQ

S6BR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 100 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6D

S6D

DIODE GEN PURP 200V 6A DO4

GeneSiC Semiconductor
2,238 -

RFQ

S6D

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 200 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6DR

S6DR

DIODE GEN PURP REV 200V 6A DO4

GeneSiC Semiconductor
2,790 -

RFQ

S6DR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 200 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6G

S6G

DIODE GEN PURP 400V 6A DO4

GeneSiC Semiconductor
3,002 -

RFQ

S6G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 400 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6GR

S6GR

DIODE GEN PURP REV 400V 6A DO4

GeneSiC Semiconductor
3,761 -

RFQ

S6GR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 400 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6J

S6J

DIODE GEN PURP 600V 6A DO4

GeneSiC Semiconductor
2,572 -

RFQ

S6J

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 600 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6JR

S6JR

DIODE GEN PURP REV 600V 6A DO4

GeneSiC Semiconductor
2,910 -

RFQ

S6JR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 600 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6K

S6K

DIODE GEN PURP 800V 6A DO4

GeneSiC Semiconductor
3,038 -

RFQ

S6K

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 800 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6KR

S6KR

DIODE GEN PURP REV 800V 6A DO4

GeneSiC Semiconductor
2,471 -

RFQ

S6KR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 800 V 6A -65°C ~ 175°C 1.1 V @ 6 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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