Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N6095R

1N6095R

DIODE SCHOTTKY REV 30V DO4

GeneSiC Semiconductor
3,070 -

RFQ

1N6095R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky, Reverse Polarity Active Chassis, Stud Mount - - 2 mA @ 20 V 30 V 25A -55°C ~ 150°C 580 mV @ 25 A
S380Y

S380Y

DIODE GEN PURP 1.6KV 380A DO205

GeneSiC Semiconductor
3,855 -

RFQ

S380Y

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 1600 V 1600 V 380A -60°C ~ 180°C 1.2 V @ 380 A
150KR60A

150KR60A

DIODE GEN PURP 600V 150A DO205AA

GeneSiC Semiconductor
3,788 -

RFQ

150KR60A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 35 mA @ 600 V 600 V 150A -40°C ~ 200°C 1.33 V @ 150 A
GB02SHT01-46

GB02SHT01-46

DIODE SCHOTTKY 100V 4A

GeneSiC Semiconductor
2,074 -

RFQ

GB02SHT01-46

Ficha técnica

Bulk RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 76pF @ 1V, 1MHz 0 ns 5 µA @ 100 V 100 V 4A (DC) -55°C ~ 210°C 1.6 V @ 1 A
GB02SHT06-46

GB02SHT06-46

DIODE SCHOTTKY 600V 4A

GeneSiC Semiconductor
2,244 -

RFQ

GB02SHT06-46

Ficha técnica

Bulk RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 76pF @ 1V, 1MHz 0 ns 5 µA @ 600 V 600 V 4A (DC) -55°C ~ 225°C 1.6 V @ 1 A
FR30A02

FR30A02

DIODE GEN PURP 50V 30A DO5

GeneSiC Semiconductor
3,003 -

RFQ

FR30A02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 50 V 30A -40°C ~ 125°C 1 V @ 30 A
FR30B02

FR30B02

DIODE GEN PURP 100V 30A DO5

GeneSiC Semiconductor
2,922 -

RFQ

FR30B02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 30A -40°C ~ 125°C 1 V @ 30 A
FR30D02

FR30D02

DIODE GEN PURP 200V 30A DO5

GeneSiC Semiconductor
3,696 -

RFQ

FR30D02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 200 V 30A -40°C ~ 125°C 1 V @ 30 A
FR30AR02

FR30AR02

DIODE GEN PURP REV 50V 30A DO5

GeneSiC Semiconductor
3,517 -

RFQ

FR30AR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 50 V 30A -40°C ~ 125°C 1.4 V @ 30 A
FR20K05

FR20K05

DIODE GEN PURP 800V 20A DO5

GeneSiC Semiconductor
3,272 -

RFQ

FR20K05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 800 V 20A -40°C ~ 125°C 1 V @ 20 A
GKN71/14

GKN71/14

DIODE GEN PURP 1.4KV 95A DO5

GeneSiC Semiconductor
3,238 -

RFQ

GKN71/14

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 1400 V 1400 V 95A -40°C ~ 180°C 1.5 V @ 60 A
FR30BR02

FR30BR02

DIODE GEN PURP REV 100V 30A DO5

GeneSiC Semiconductor
2,047 -

RFQ

FR30BR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 30A -40°C ~ 125°C 1 V @ 30 A
FR20M05

FR20M05

DIODE GEN PURP 1KV 20A DO5

GeneSiC Semiconductor
2,049 -

RFQ

FR20M05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 1000 V 20A -40°C ~ 125°C 1 V @ 20 A
FR30DR02

FR30DR02

DIODE GEN PURP REV 200V 30A DO5

GeneSiC Semiconductor
2,488 -

RFQ

FR30DR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 200 V 30A -40°C ~ 125°C 1 V @ 30 A
FR30JR02

FR30JR02

DIODE GEN PURP REV 600V 30A DO5

GeneSiC Semiconductor
2,339 -

RFQ

FR30JR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 600 V 30A -40°C ~ 125°C 1 V @ 30 A
FR30KR05

FR30KR05

DIODE GEN PURP REV 800V 30A DO5

GeneSiC Semiconductor
3,058 -

RFQ

FR30KR05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 800 V 30A -40°C ~ 125°C 1 V @ 30 A
FR30MR05

FR30MR05

DIODE GEN PURP REV 1KV 30A DO5

GeneSiC Semiconductor
3,945 -

RFQ

FR30MR05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 1000 V 30A -40°C ~ 125°C 1 V @ 30 A
FR20AR02

FR20AR02

DIODE GEN PURP REV 50V 20A DO5

GeneSiC Semiconductor
2,150 -

RFQ

FR20AR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 50 V 20A -40°C ~ 125°C 1 V @ 20 A
FR20BR02

FR20BR02

DIODE GEN PURP REV 100V 20A DO5

GeneSiC Semiconductor
3,123 -

RFQ

FR20BR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 20A -40°C ~ 125°C 1 V @ 20 A
FR20DR02

FR20DR02

DIODE GEN PURP REV 200V 20A DO5

GeneSiC Semiconductor
3,810 -

RFQ

FR20DR02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 200 V 20A -40°C ~ 125°C 1 V @ 20 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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