Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S6M

S6M

DIODE GEN PURP 1KV 6A DO4

GeneSiC Semiconductor
3,535 -

RFQ

S6M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1000 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6MR

S6MR

DIODE GEN PURP REV 1KV 6A DO4

GeneSiC Semiconductor
2,926 -

RFQ

S6MR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1000 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6Q

S6Q

DIODE GEN PURP 1.2KV 6A DO4

GeneSiC Semiconductor
2,604 -

RFQ

S6Q

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1200 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6QR

S6QR

DIODE GEN PURP REV 1.2KV 6A DO4

GeneSiC Semiconductor
3,464 -

RFQ

S6QR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1200 V 6A -65°C ~ 175°C 1.1 V @ 6 A
1N3673AR

1N3673AR

DIODE GEN PURP REV 1KV 12A DO4

GeneSiC Semiconductor
3,469 -

RFQ

1N3673AR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1202AR

1N1202AR

DIODE GEN PURP REV 200V 12A DO5

GeneSiC Semiconductor
3,646 -

RFQ

1N1202AR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 200°C 1.1 V @ 12 A
GC50MPS06-247

GC50MPS06-247

SIC DIODE 650V 50A TO-247-2

GeneSiC Semiconductor
2,246 -

RFQ

GC50MPS06-247

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 650 V 50A (DC) 175°C (Max) -
GB10MPS17-247

GB10MPS17-247

SIC DIODE 1700V 10A TO-247-2

GeneSiC Semiconductor
3,402 -

RFQ

GB10MPS17-247

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Through Hole 669pF @ 1V, 1MHz 0 ns 12 µA @ 1700 V 1700 V 50A (DC) -55°C ~ 175°C 1.8 V @ 10 A
GB25MPS17-247

GB25MPS17-247

SIC DIODE 1700V 25A TO-247-2

GeneSiC Semiconductor
3,033 -

RFQ

GB25MPS17-247

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1596pF @ 1V, 1MHz 0 ns 30 µA @ 1700 V 1700 V 110A (DC) -55°C ~ 175°C 1.8 V @ 25 A
1N3890

1N3890

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor
3,863 -

RFQ

1N3890

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 12A -65°C ~ 150°C 1.4 V @ 12 A
1N3893

1N3893

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
2,926 -

RFQ

1N3893

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 600 V 12A -65°C ~ 150°C 1.4 V @ 12 A
FR12B05

FR12B05

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor
2,295 -

RFQ

FR12B05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 100 V 12A -65°C ~ 150°C 800 mV @ 12 A
FR12D05

FR12D05

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
2,038 -

RFQ

FR12D05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 200 V 12A -65°C ~ 150°C 800 mV @ 12 A
FR12G05

FR12G05

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
3,773 -

RFQ

FR12G05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 400 V 12A -65°C ~ 150°C 800 mV @ 12 A
FR12J05

FR12J05

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
2,611 -

RFQ

FR12J05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 600 V 12A -65°C ~ 150°C 800 mV @ 12 A
S70Y

S70Y

DIODE GEN PURP 1.6KV 70A DO5

GeneSiC Semiconductor
3,660 -

RFQ

S70Y

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1600 V 70A -65°C ~ 150°C 1.1 V @ 70 A
S70YR

S70YR

DIODE GEN PURP REV 1.6KV 70A DO5

GeneSiC Semiconductor
3,425 -

RFQ

S70YR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1600 V 70A -65°C ~ 150°C 1.1 V @ 70 A
S16B

S16B

DIODE GEN PURP 100V 16A DO203AA

GeneSiC Semiconductor
2,793 -

RFQ

S16B

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16BR

S16BR

DIODE GEN PURP 100V 16A DO220AA

GeneSiC Semiconductor
2,748 -

RFQ

S16BR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16D

S16D

DIODE GEN PURP 200V 16A DO203AA

GeneSiC Semiconductor
3,943 -

RFQ

S16D

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
Total 789 Record«Prev12345...40Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario