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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GD30MPS12HDIODE SCHOTTKY 1200V 30A TO-247- GeneSiC Semiconductor |
2,344 | - |
RFQ |
Ficha técnica |
Tube | SiC Schottky MPS™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1101pF @ 1V, 1MHz | - | 20 µA @ 1200 V | 1200 V | 55A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A |
|
GD15MPS17H1700V 15A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor |
2,178 | - |
RFQ |
Ficha técnica |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.082nF @ 1V, 1MHz | 0 ns | 20 µA @ 1700 V | 1700 V | 36A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A |
|
GC05MPS33J3300V 5A TO-263-7 SIC SCHOTTKY M GeneSiC Semiconductor |
2,890 | - |
RFQ |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | - | 3300 V | 5A (DC) | 175°C | - | |
|
GB05MPS17-247SIC DIODE 1700V 5A TO-247-2 GeneSiC Semiconductor |
3,886 | - |
RFQ |
Ficha técnica |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 334pF @ 1V, 1MHz | 0 ns | 6 µA @ 1700 V | 1700 V | 25A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
GB01SLT12-252DIODE SILICON 1.2KV 1A TO252 GeneSiC Semiconductor |
11,518 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 69pF @ 1V, 1MHz | 0 ns | 2 µA @ 1200 V | 1200 V | 1A | -55°C ~ 175°C | 1.8 V @ 1 A |
|
GD02MPS12E1200V 2A TO-252-2 SIC SCHOTTKY M GeneSiC Semiconductor |
7,194 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 73pF @ 1V, 1MHz | 0 ns | 5 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
|
GE04MPS06E650V 4A TO-252-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
6,982 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 186pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.35 V @ 4 A |
|
|
GE06MPS06E650V 6A TO-252-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
2,500 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 279pF @ 1V, 1MHz | - | - | 650 V | 17A (DC) | -55°C ~ 175°C | - |
|
1N3883DIODE GEN PURP 400V 6A DO4 GeneSiC Semiconductor |
153 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 15 µA @ 50 V | 400 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A |
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