Fairchild Semiconductor HGTG27N120BN

Número de parte
HGTG27N120BN
Fabricante
Fairchild Semiconductor
Categoría:
Transistoren – IGBTs – Einzeltransistoren
Paquete
TO-247-3
Ficha técnica
Fudong Communication (Shenzhen) Grupo Co., Ltd.HGTG27N120BN.pdf
Descripción
INSULATED GATE BIPOLAR TRANSISTO
Cantidad

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Precio total$0

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1. How to order HGTG27N120BN on Fudong Communication (Shenzhen) Grupo Co., Ltd.?

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2. How does Fudong Communication (Shenzhen) Grupo Co., Ltd. guarantee that HGTG27N120BN is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the HGTG27N120BN. All suppliers must pass our qualification reviews before they can publish their products including HGTG27N120BN on Fudong Communication (Shenzhen) Grupo Co., Ltd.; we pay more attention to the channels and quality of HGTG27N120BN products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

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6. What is the process for return or replacement of HGTG27N120BN?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HGTG27N120BN we delivered, we will accept the replacement or return of the HGTG27N120BN only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HGTG27N120BN.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as HGTG27N120BN pin diagram, HGTG27N120BN datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Imagen FGD2N40L HGTD3N60A4S FGS15N40LTF SGS13N60UFDTU FGA20S125P
Número de parte FGD2N40L HGTD3N60A4S FGS15N40LTF SGS13N60UFDTU FGA20S125P
Fabricante Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Packaging Bulk Bulk Bulk Bulk Bulk
Series - - - - -
ProductStatus Active Active Active Active Active
IGBTType NPT NPT NPT NPT NPT
Voltage-CollectorEmitterBreakdown(Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current-Collector(Ic)(Max) 72 A 72 A 72 A 72 A 72 A
Current-CollectorPulsed(Icm) 216 A 216 A 216 A 216 A 216 A
Vce(on)(Max)@VgeIc 2.7V @ 15V, 27A 2.7V @ 15V, 27A 2.7V @ 15V, 27A 2.7V @ 15V, 27A 2.7V @ 15V, 27A
Power-Max 500 W 500 W 500 W 500 W 500 W
SwitchingEnergy 2.2mJ (on), 2.3mJ (off) 2.2mJ (on), 2.3mJ (off) 2.2mJ (on), 2.3mJ (off) 2.2mJ (on), 2.3mJ (off) 2.2mJ (on), 2.3mJ (off)
InputType Standard Standard Standard Standard Standard
GateCharge 270 nC 270 nC 270 nC 270 nC 270 nC
Td(on/off)@25°C 24ns/195ns 24ns/195ns 24ns/195ns 24ns/195ns 24ns/195ns
TestCondition 960V, 27A, 3Ohm, 15V 960V, 27A, 3Ohm, 15V 960V, 27A, 3Ohm, 15V 960V, 27A, 3Ohm, 15V 960V, 27A, 3Ohm, 15V
ReverseRecoveryTime(trr) - - - - -
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

HGTG27N120BN Información relevante

Las siguientes partes están incluidas "HGTG27N120BN" ISSI, soluciones integradas de silicio, Inc. HGTG27N120BN.

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