Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXGM25N100A

IXGM25N100A

POWER MOSFET TO-3

IXYS
2,561 -

RFQ

IXGM25N100A

Ficha técnica

Tube - Obsolete - 1000 V 50 A 100 A 4V @ 15V, 25A 200 W 5mJ (off) Standard 180 nC 100ns/500ns 800V, 25A, 33Ohm, 15V 200 ns -55°C ~ 150°C (TJ) Through Hole
IXGM30N60

IXGM30N60

POWER MOSFET TO-3

IXYS
3,864 -

RFQ

Tube - Obsolete - 600 V 50 A 100 A 2.5V @ 15V, 30A 200 W - Standard 180 nC 100ns/500ns - 200 ns -55°C ~ 150°C (TJ) Through Hole
IXGM40N60

IXGM40N60

POWER MOSFET TO-3

IXYS
3,638 -

RFQ

Tube - Obsolete - 600 V 75 A 150 A 2.5V @ 15V, 40A 250 W - Standard 250 nC 100ns/600ns 480V, 40A, 22Ohm, 15V 200 ns -55°C ~ 150°C (TJ) Through Hole
IXGM40N60AL

IXGM40N60AL

POWER MOSFET TO-3

IXYS
2,599 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXGP48N60B3

IXGP48N60B3

DISC IGBT PT-MID FREQUENCY TO-22

IXYS
3,542 -

RFQ

Tube GenX3™ Obsolete PT 600 V 48 A 280 A 1.8V @ 15V, 32A 300 W 840µJ (on), 660µJ (off) Standard 115 nC 22ns/130ns 480V, 30A, 5Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Through Hole
IXGH56N60B3

IXGH56N60B3

DISC IGBT PT-MID FREQUENCY TO-24

IXYS
2,875 -

RFQ

Tube GenX3™ Obsolete PT 600 V 130 A 350 A 1.8V @ 15V, 44A 330 W 1.3mJ (on), 1.05mJ (off) Standard 138 nC 26ns/155ns 480V, 44A, 5Ohm, 15V 41 ns -55°C ~ 150°C (TJ) Through Hole
IXGT64N60B3

IXGT64N60B3

DISC IGBT PT-MID FREQUENCY TO-26

IXYS
3,751 -

RFQ

Tube GenX3™ Obsolete PT 600 V 64 A 400 A 1.8V @ 15V, 50A 460 W 1.5mJ (on), 1mJ (off) Standard 168 nC 25ns/138ns 480V, 50A, 3Ohm, 15V 41 ns -55°C ~ 150°C (TJ) Surface Mount
IXGR72N60C3

IXGR72N60C3

DISC IGBT PT-HIFREQUENCY ISOPLUS

IXYS
2,130 -

RFQ

Tube GenX3™ Obsolete PT 600 V 80 A 400 A 2.7V @ 15V, 50A 200 W 1.03mJ (on), 480µJ (off) Standard 175 nC 27ns/77ns 480V, 50A, 2Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
IXGK120N60B3

IXGK120N60B3

DISC IGBT PT-MID FREQUENCY TO-26

IXYS
3,396 -

RFQ

Tube GenX3™ Obsolete PT 600 V 280 A 600 A 1.8V @ 15V, 100A 780 W 2.9mJ (on), 3.5mJ (off) Standard 465 nC 40ns/227ns 480V, 100A, 2Ohm, 15V 87 ns -55°C ~ 150°C (TJ) Through Hole
IXGP28N60A3M

IXGP28N60A3M

DISC IGBT PT-LOW FREQUENCY TO-22

IXYS
2,591 -

RFQ

Tube GenX3™ Obsolete PT 600 V 38 A 200 A 1.4V @ 15V, 24A 64 W - Standard 66 nC 18ns/300ns 480V, 24A, 10Ohm, 15V 26 ns -55°C ~ 150°C (TJ) Through Hole
IXYP30N65B3D1

IXYP30N65B3D1

IGBT 650V 30A TO220

IXYS
2,213 -

RFQ

Tube GenX3™, XPT™ Active - - - - - - - - - - - - - Through Hole
IXGA30N60C3

IXGA30N60C3

IGBT 600V 60A 220W TO-263AA

IXYS
3,784 -

RFQ

Tube GenX3™ Obsolete PT 600 V 60 A 150 A 3V @ 15V, 20A 220 W 270µJ (on), 90µJ (off) Standard 38 nC 16ns/42ns 300V, 20A, 5Ohm, 15V 26 ns -55°C ~ 150°C (TJ) Surface Mount
LGB8207ATH

LGB8207ATH

D2PAK, IGBT3

IXYS
3,412 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
LGB8204ATH

LGB8204ATH

D2PAK, IGBT3

IXYS
2,441 -

RFQ

Tape & Reel (TR) - Active - 430 V 18 A 50 A 2V @ 4.5V, 10A 115 W - Logic - - - - -55°C ~ 175°C (TJ) Surface Mount
LGD8201TH

LGD8201TH

DPAK, IGBT3

IXYS
3,970 -

RFQ

Tape & Reel (TR) - Active - 440 V 20 A 50 A 1.9V @ 4.5V, 20A 125 W - Logic - - - - -55°C ~ 175°C (TJ) Surface Mount
IXYK140N90C3

IXYK140N90C3

IGBT 900V 310A 1630W TO264

IXYS
642 -

RFQ

IXYK140N90C3

Ficha técnica

Tube GenX3™, XPT™ Active - 900 V 310 A 840 A 2.7V @ 15V, 140A 1630 W 4.3mJ (on), 4mJ (off) Standard 330 nC 40ns/145ns 450V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXGH32N170

IXGH32N170

IGBT 1700V 75A 350W TO247AD

IXYS
2,186 -

RFQ

IXGH32N170

Ficha técnica

Tube - Active NPT 1700 V 75 A 200 A 3.3V @ 15V, 32A 350 W 11mJ (off) Standard 155 nC 45ns/270ns 1020V, 32A, 2.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXBH42N170

IXBH42N170

IGBT 1700V 80A 360W TO247

IXYS
547 -

RFQ

IXBH42N170

Ficha técnica

Bulk BIMOSFET™ Active - 1700 V 80 A 300 A 2.8V @ 15V, 42A 360 W - Standard 188 nC - - 1.32 µs -55°C ~ 150°C (TJ) Through Hole
IXXX300N60B3

IXXX300N60B3

IGBT 600V 550A 2300W TO247

IXYS
873 -

RFQ

IXXX300N60B3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 550 A 1140 A 1.6V @ 15V, 100A 2300 W 3.45mJ (on), 2.86mJ (off) Standard 460 nC 50ns/190ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYX30N170CV1

IXYX30N170CV1

1700V/108A HIGH VOLTAGE XPT IGB

IXYS
3,146 -

RFQ

IXYX30N170CV1

Ficha técnica

Tube XPT™ Active - 1700 V 108 A 255 A 3.7V @ 15V, 30A 937 W 5.9mJ (on), 3.3mJ (off) Standard 140 nC 28ns/150ns 850V, 30A, 2.7Ohm, 15V 160 ns -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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