Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXBF50N360

IXBF50N360

IGBT 3600V 70A 290W I4-PAK

IXYS
3,891 -

RFQ

IXBF50N360

Ficha técnica

Tube BIMOSFET™ Not For New Designs - 3600 V 70 A 420 A 2.9V @ 15V, 50A 290 W - Standard 210 nC 46ns/205ns 960V, 50A, 5Ohm, 15V 1.7 µs -55°C ~ 150°C (TJ) Through Hole
IXBL60N360

IXBL60N360

IGBT 3600V 92A ISOPLUS I5PAK

IXYS
2,707 -

RFQ

IXBL60N360

Ficha técnica

Tube BIMOSFET™ Not For New Designs - 3600 V 92 A 720 A 3.4V @ 15V, 60A 417 W - Standard 450 nC 50ns/340ns 960V, 60A, 4.7Ohm, 15V 1.95 µs -55°C ~ 150°C (TJ) Through Hole
IXBT20N360HV

IXBT20N360HV

IGBT 3600V 70A TO-268HV

IXYS
2,575 -

RFQ

IXBT20N360HV

Ficha técnica

Tube BIMOSFET™ Not For New Designs - 3600 V 70 A 220 A 3.4V @ 15V, 20A 430 W 15.5mJ (on), 4.3mJ (off) Standard 110 nC 18ns/238ns 1500V, 20A, 10Ohm, 15V 1.7 µs -55°C ~ 150°C (TJ) Surface Mount
IXBL20N300C

IXBL20N300C

IGBT 3000V

IXYS
2,510 -

RFQ

IXBL20N300C

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 50 A 430 A 6V @ 15V, 20A 417 W 23mJ (on), 2.6mJ (off) Standard 425 nC 33ns/370ns 1500V, 20A, 3Ohm, 15V 864 ns -55°C ~ 150°C (TJ) Through Hole
IXGK300N60B3

IXGK300N60B3

IGBT 600V 1000W TO264AA

IXYS
3,034 -

RFQ

Tube - Active - - - - - - - - - - - - - -
IXGX300N60B3

IXGX300N60B3

IGBT 600V 1000W PLUS247

IXYS
3,642 -

RFQ

Tube - Active - - - - - - - - - - - - - -
IXYH12N250C

IXYH12N250C

IGBT 2500V 28A TO247AD

IXYS
2,314 -

RFQ

IXYH12N250C

Ficha técnica

Tube XPT™ Active - 2500 V 28 A 80 A 4.5V @ 15V, 12A 310 W 3.56mJ (on), 1.7mJ (off) Standard 56 nC 12ns/167ns 1250V, 12A, 10Ohm, 15V 16 ns -55°C ~ 175°C (TJ) Through Hole
IXYH16N250C

IXYH16N250C

IGBT 2500V 35A TO247AD

IXYS
3,649 -

RFQ

IXYH16N250C

Ficha técnica

Tube XPT™ Active - 2500 V 35 A 126 A 4V @ 15V, 16A 500 W 4.75mJ (on), 3.9mJ (off) Standard 97 nC 14ns/260ns 1250V, 16A, 10Ohm, 15V 19 ns -55°C ~ 175°C (TJ) Through Hole
IXYH8N250C

IXYH8N250C

IGBT 2500V 29A TO247AD

IXYS
3,304 -

RFQ

IXYH8N250C

Ficha técnica

Tube XPT™ Active - 2500 V 29 A 70 A 4V @ 15V, 8A 280 W 2.6mJ (on), 1.07mJ (off) Standard 45 nC 11ns/180ns 1250V, 8A, 15Ohm, 15V 5 ns -55°C ~ 175°C (TJ) Through Hole
IXDA20N120AS-TUB

IXDA20N120AS-TUB

IGBT

IXYS
2,110 -

RFQ

IXDA20N120AS-TUB

Ficha técnica

Tube - Active - - - - - - - - - - - - - -
IXGA28N60A3

IXGA28N60A3

IGBT

IXYS
3,744 -

RFQ

IXGA28N60A3

Ficha técnica

Tube GenX3™ Obsolete PT 600 V 75 A 170 A 1.4V @ 15V, 24A 190 W 700µJ (on), 2.4mJ (off) Standard 66 nC 18ns/300ns 480V, 24A, 10Ohm, 15V 26 ns -55°C ~ 150°C (TJ) Surface Mount
IXGA36N60A3

IXGA36N60A3

IGBT

IXYS
2,391 -

RFQ

IXGA36N60A3

Ficha técnica

Tube GenX3™ Obsolete PT 600 V - 200 A 1.4V @ 15V, 30A 220 W 740µJ (on), 3mJ (off) Standard 80 nC 18ns/330ns 400V, 30A, 5Ohm, 15V 23 ns -55°C ~ 150°C (TJ) Surface Mount
IXGH28N60A3

IXGH28N60A3

IGBT

IXYS
2,721 -

RFQ

IXGH28N60A3

Ficha técnica

Tube GenX3™ Obsolete PT 600 V 75 A 170 A 1.4V @ 15V, 24A 190 W 700µJ (on), 2.4mJ (off) Standard 66 nC 18ns/300ns 480V, 24A, 10Ohm, 15V 26 ns -55°C ~ 150°C (TJ) Through Hole
IXXN200N65A4

IXXN200N65A4

IGBT

IXYS
2,434 -

RFQ

IXXN200N65A4

Ficha técnica

Tube XPT™, GenX4™ Active - 650 V 440 A 1200 A 1.8V @ 15V, 200A 1250 W 8.8mJ (on), 6.7mJ (off) Standard 736 nC 140ns/1.04µs 400V, 100A, 1Ohm, 15V 160 ns -55°C ~ 175°C (TJ) Chassis Mount
IXYA20N65B3

IXYA20N65B3

IGBT

IXYS
2,008 -

RFQ

IXYA20N65B3

Ficha técnica

Tube XPT™, GenX3™ Active - 650 V 58 A 108 A 2.1V @ 15V, 20A 230 W 500µJ (on), 700µJ (off) Standard 29 nC 12ns/103ns 400V, 20A, 20Ohm, 15V 25 ns -55°C ~ 175°C (TJ) Surface Mount
IXYH75N120B4

IXYH75N120B4

IGBT

IXYS
2,737 -

RFQ

IXYH75N120B4

Ficha técnica

Tube XPT™, GenX4™ Active - 1200 V 240 A 440 A 2.2V @ 15V, 75A 1150 W 4.5mJ (on), 2.7mJ (off) Standard 157 nC 22ns/182ns 600V, 50A, 3Ohm, 15V 66 ns -55°C ~ 175°C (TJ) Through Hole
IXYQ40N65C3D1

IXYQ40N65C3D1

IGBT

IXYS
3,659 -

RFQ

IXYQ40N65C3D1

Ficha técnica

Tube XPT™, GenX3™ Active - 650 V 80 A 180 A 2.35V @ 15V, 40A 300 W 830µJ (on), 650µJ (off) Standard 66 nC 23ns/110ns 400V, 30A, 10Ohm, 15V 40 ns -55°C ~ 175°C (TJ) Through Hole
IXGM17N100A

IXGM17N100A

POWER MOSFET TO-3

IXYS
2,085 -

RFQ

IXGM17N100A

Ficha técnica

Tube - Obsolete - 1000 V 34 A 68 A 4V @ 15V, 17A 150 W 3mJ (off) Standard 120 nC 100ns/500ns 800V, 17A, 82Ohm, 15V 200 ns -55°C ~ 150°C (TJ) Through Hole
IXGM20N60

IXGM20N60

POWER MOSFET TO-3

IXYS
3,447 -

RFQ

Tube - Obsolete - 600 V 40 A 80 A 2.5V @ 15V, 20A 150 W 2mJ (on), 3.2mJ (off) Standard 120 nC 100ns/600ns 480V, 20A, 82Ohm, 15V 200 ns -55°C ~ 150°C (TJ) Through Hole
IXGM20N60A

IXGM20N60A

POWER MOSFET TO-3

IXYS
2,980 -

RFQ

Tube - Obsolete - 600 V 40 A 80 A 3V @ 15V, 20A 150 W 2mJ (on), 2mJ (off) Standard 120 nC 100ns/600ns 480V, 20A, 82Ohm, 15V 200 ns -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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