Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXGP50N60C4

IXGP50N60C4

IGBT 600V 90A 300W TO220

IXYS
2,461 -

RFQ

IXGP50N60C4

Ficha técnica

Tube - Obsolete PT 600 V 90 A 220 A 2.3V @ 15V, 36A 300 W 950µJ (on), 840µJ (off) Standard 113 nC 40ns/270ns 400V, 36A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGQ50N60B4D1

IXGQ50N60B4D1

IGBT 600V 100A 300W TO3P

IXYS
3,220 -

RFQ

IXGQ50N60B4D1

Ficha técnica

Tube - Obsolete PT 600 V 100 A 230 A 1.8V @ 15V, 36A 300 W 930µJ (on), 1mJ (off) Standard 110 nC 37ns/330ns 400V, 36A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Through Hole
IXGQ50N60C4D1

IXGQ50N60C4D1

IGBT 600V 90A 300W TO3P

IXYS
2,715 -

RFQ

IXGQ50N60C4D1

Ficha técnica

Tube - Obsolete PT 600 V 90 A 220 A 2.3V @ 15V, 36A 300 W 950µJ (on), 840µJ (off) Standard 113 nC 40ns/270ns 400V, 36A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Through Hole
IXGT20N140C3H1

IXGT20N140C3H1

IGBT 1400V 42A 250W TO268

IXYS
3,916 -

RFQ

IXGT20N140C3H1

Ficha técnica

Tube GenX3™ Obsolete PT 1400 V 42 A 108 A 5V @ 15V, 20A 250 W 1.35mJ (on), 440µJ (off) Standard 88 nC 19ns/110ns 700V, 20A, 5Ohm, 15V 70 ns -55°C ~ 150°C (TJ) Surface Mount
IXGT72N60B3

IXGT72N60B3

IGBT 600V 75A 540W TO268

IXYS
3,433 -

RFQ

Tube GenX3™ Obsolete PT 600 V 75 A 400 A 1.8V @ 15V, 60A 540 W 1.38mJ (on), 1.05mJ (off) Standard 230 nC 31ns/150ns 480V, 50A, 3Ohm, 15V - - Surface Mount
IXGX120N120B3

IXGX120N120B3

IGBT 1200V 200A 830W PLUS247

IXYS
3,419 -

RFQ

Tube GenX3™ Active PT 1200 V 200 A 370 A 3V @ 15V, 100A 830 W 5.5mJ (on), 5.8mJ (off) Standard 470 nC 36ns/275ns 600V, 100A, 2Ohm, 15V - - Through Hole
IXGX28N140B3H1

IXGX28N140B3H1

IGBT 1400V 60A 300W PLUS247

IXYS
2,794 -

RFQ

Tube GenX3™ Obsolete - 1400 V 60 A 150 A 3.6V @ 15V, 28A 300 W 3.6mJ (on), 3.9mJ (off) Standard 88 nC 16ns/190ns 960V, 28A, 5Ohm, 15V 350 ns - Through Hole
IXGX64N60B3D1

IXGX64N60B3D1

IGBT 600V 460W PLUS247

IXYS
3,715 -

RFQ

Tube GenX3™ Obsolete PT 600 V - 400 A 1.8V @ 15V, 50A 460 W 1.5mJ (on), 1mJ (off) Standard 168 nC 25ns/138ns 480V, 50A, 3Ohm, 15V 35 ns - Through Hole
IXGX82N120B3

IXGX82N120B3

IGBT 1200V 230A 1250W PLUS247

IXYS
2,194 -

RFQ

Tube GenX3™ Active PT 1200 V 230 A 500 A 3.2V @ 15V, 82A 1250 W 5mJ (on), 3.3mJ (off) Standard 350 nC 30ns/210ns 600V, 80A, 2Ohm, 15V - - Through Hole
IXGV25N250S

IXGV25N250S

IGBT 2500V 60A 250W PLUS220SMD

IXYS
2,542 -

RFQ

IXGV25N250S

Ficha técnica

Tube - Obsolete NPT 2500 V 60 A 200 A 5.2V @ 15V, 75A 250 W - Standard 75 nC - - - -55°C ~ 150°C (TJ) Surface Mount
IXGF25N300

IXGF25N300

IGBT 3000V 27A 114W I4-PAK

IXYS
3,008 -

RFQ

IXGF25N300

Ficha técnica

Tube - Active - 3000 V 27 A 140 A 5.5V @ 15V, 75A 114 W - Standard 75 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXGH10N300

IXGH10N300

IGBT 3000V 18A 100W TO247AD

IXYS
3,415 -

RFQ

IXGH10N300

Ficha técnica

Tube - Obsolete - 3000 V 18 A 40 A 5.2V @ 15V, 30A 100 W - Standard 32 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXGF36N300

IXGF36N300

IGBT 3000V 36A 160W I4-PAK

IXYS
2,053 -

RFQ

IXGF36N300

Ficha técnica

Tube - Active - 3000 V 36 A 400 A 5.2V @ 15V, 100A 160 W - Standard 136 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXXK160N65C4

IXXK160N65C4

IGBT 650V 290A 940W TO264

IXYS
2,809 -

RFQ

IXXK160N65C4

Ficha técnica

Tube GenX4™, XPT™ Discontinued at Mosen PT 650 V 290 A 800 A 2.1V @ 15V, 160A 940 W 3.5mJ (on), 1.3mJ (off) Standard 422 nC 52ns/197ns 400V, 80A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXBF10N300C

IXBF10N300C

IGBT 3000V 29A 240W ISOPLUSI4

IXYS
3,540 -

RFQ

IXBF10N300C

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 29 A 240 A 6V @ 15V, 10A 240 W 7.2mJ (on), 1.04mJ (off) Standard 208 nC 32ns/390ns 1500V, 10A, 10Ohm, 15V 700 ns -55°C ~ 150°C (TJ) Through Hole
IXBF15N300C

IXBF15N300C

IGBT 3000V 37A 300W ISOPLUSI4

IXYS
3,206 -

RFQ

IXBF15N300C

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 37 A 300 A 6V @ 15V, 15A 300 W 9.15mJ (on), 1.4mJ (off) Standard 267 nC 40ns/455ns 1500V, 15A, 10Ohm, 15V 706 ns -55°C ~ 150°C (TJ) Through Hole
IXYP10N65C3

IXYP10N65C3

IGBT 650V 30A 160W TO220

IXYS
2,242 -

RFQ

IXYP10N65C3

Ficha técnica

Tube GenX3™, XPT™ Active PT 650 V 30 A 54 A 2.5V @ 15V, 10A 160 W 240µJ (on), 110µJ (off) Standard 18 nC 20ns/77ns 400V, 10A, 50Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXGA30N60C3D4

IXGA30N60C3D4

IGBT 600V 60A 220W TO263

IXYS
2,774 -

RFQ

IXGA30N60C3D4

Ficha técnica

Tube GenX3™ Obsolete PT 600 V 60 A 150 A 3V @ 15V, 20A 220 W 270µJ (on), 90µJ (off) Standard 38 nC 16ns/42ns 300V, 20A, 5Ohm, 15V 60 ns -55°C ~ 150°C (TJ) Surface Mount
IXBT20N300HV

IXBT20N300HV

IGBT 3000V 50A 250W TO268

IXYS
3,622 -

RFQ

IXBT20N300HV

Ficha técnica

Tube BIMOSFET™ Not For New Designs - 3000 V 50 A 140 A 3.2V @ 15V, 20A 250 W - Standard 105 nC - - 1.35 µs -55°C ~ 150°C (TJ) Surface Mount
IXYH40N65C3

IXYH40N65C3

IGBT 650V 80A 300W TO247

IXYS
3,651 -

RFQ

IXYH40N65C3

Ficha técnica

Tube GenX3™, XPT™ Active PT 650 V 80 A 180 A 2.2V @ 15V, 40A 300 W 860µJ (on), 400µJ (off) Standard 70 nC 26ns/106ns 400V, 30A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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